Najing Technology Corporation Limited

Jianhai Zhou

Yongyin Kang

Hailin Wang

Yunjian Lan

Xiangpeng Du

Shirong Yu

Disclosed are a light conversion device and a preparation method thereof, and a display device having the light conversion device. The preparation method includes the step of performing photolithography process n times on the substrate layer sequentially, wherein a patterned quantum dot structure and a cured photoresist layer are obtained by means of this step.

Light conversion device and preparation method thereof, and display device having light conversion device

This present disclosure provides a manufacturing process of light emitting device and a light emitting device. The manufacturing process of light emitting device includes: step S1, making a quantum dot film; step S2, providing a LED unit, the LED unit including at least one LED chip; step S3, disposing a first transparent adhesive layer on an exposed surface of each LED chip; step S4, disposing the quantum dot film on the surface of the first transparent adhesive layer far away from the LED chip.

Manufacturing process of light emitting device comprising quantum dot film and transparent adhesive layer

The disclosure provides a II-II-VI alloy quantum dot, a preparation method and application thereof. The preparation method includes: step S1: reacting a precursor containing a second Group II element and a precursor containing a first Group VI element to form a II-VI semiconductor nanocluster; step S2: mixing the II-VI semiconductor nanocluster with a precursor containing a first Group II element, and performing cation exchange and in-situ growth to obtain a first system containing the II-II-VI alloy quantum dot.

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Zhejiang, China

Jianhai Zhou