Globalfoundries Inc.

Jianghu Yan

Yi Qi

Jianwei Peng

Hsien-Ching Lo

O Sung Kwon

Xiaoqiang Zhang

Yongjun Shi

Roderick Miller

HongLiang Shen

Alina Vinslava

Wen-Hu Hung

Methods of forming a field-effect transistor and structures for a field-effect transistor. A gate structure is formed that overlaps with a channel region in a semiconductor fin. The semiconductor fin is etched with a first etching process to form a first cavity extending into the semiconductor fin adjacent to the channel region. The semiconductor fin is etched with a second etching process to form a second cavity that is volumetrically smaller than the first cavity and that adjoins the first cavity.

Dual-curvature cavity for epitaxial semiconductor growth

An e-fuse device disclosed herein includes an anode and a cathode that are conductively coupled to the doped region formed in a substrate, wherein the anode includes a first metal silicide region positioned on the doped region and a first conductive metal-containing contact that is positioned above and coupled to the first metal silicide region, and the cathode includes a second metal silicide region positioned on the doped region and a second conductive metal-containing contact that is positioned above and conductively coupled to the second metal silicide region. A method disclosed herein includes forming a doped region in a substrate for an e-fuse device and performing at least one common process operation to form a first conductive structure on the doped region of the e-fuse device and a second conductive structure on a source/drain region of a transistor.

Methods of forming an e-fuse for an integrated circuit product and the resulting e-fuse structure

Growing community of inventors

Singapore, Singapore

Jianghu Yan