Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

China Petroleum & Chemical Corporation

Beijing Research Institute of Chemical Industry, China Petroleum & Chemical Corporation

Jiangbo Chen

Fanli Meng

Zeyuan Li

Guoying Wang

Fan Li

Wei Liu

Youngsuk Song

Shuo Zhang

Da Li

Yanzhao Li

Hongda Sun

Kui Liang

Yao Lu

Wei Li

Dongfang Wang

Jun Cheng

Tuo Sun

Zhen Song

Liangchen Yan

Liye Duan

Chunsheng Jiang

Young Suk Song

Ding Ding

Yang Liu

Li Ni Zhang

Can Wang

Xing Zhang

Wenjun Hou

Ying Han

Ning Li

Quanhu Li

Lei Zhao

Li Zhang

Jingang Fang

Baoxia Zhang

Huifeng Wang

Jianhua Du

Zhichao Yang

Xiaohui Liu

Wenfeng Song

Xiangyong Kong

Xiaodi Liu

Ning Dang

Jianye Zhang

Zhong Tan

Luqiang Yu

Dali Liu

Jianxin Zhang

Lusheng Wang

Yafeng Du

Qinyu Tong

Kang Sun

Jie Zou

Zengyue Dai

Provided are a detection substrate and a manufacturing method therefor, and a ray detection apparatus. The detection substrate includes: a driving back plate, wherein the driving back plate is provided with a plurality of detection regions, and each detection region includes a thin-film transistor located on a base substrate, and a first bonding electrode that is located on the thin-film transistor and is electrically connected to a source electrode of the thin-film transistor; and a plurality of avalanche photodiodes, wherein the plurality of avalanche photodiodes are arranged in the detection regions one by one, and a second bonding electrode that is fixedly connected to the first bonding electrode is arranged on the side of each avalanche photodiode that faces the driving back plate.

Detection substrate and manufacturing method therefor, and ray detection apparatus

A photoelectric detection circuit and a driving method therefor, and a detection substrate and a ray detector. The photoelectric detection circuit includes a storage circuit (), an amplification circuit (), a first reading circuit () and a second reading circuit (), where the storage circuit (), the amplification circuit () and the first reading circuit () cooperate with one another to realize a photoelectric detection function in an active mode; and the storage circuit () and the second reading circuit () cooperate with each other to realize a photoelectric detection function in a passive mode.

Photoelectric detection circuit and driving method therefor, and detection substrate and ray detector

The present disclosure relates to an X-RAY detector including a base substrate and a plurality of detection units arranged on the base substrate. Each detection unit includes a light conversion element and a switching transistor, the light conversion element is configured to convert an optical signal into an electrical signal, and the switching transistor is configured to output the electrical signal to a reading signal line. Each detection unit further includes a radiation shielding structure located at a light-entering side of the detection unit, and an orthogonal projection of the radiation shielding structure onto the base substrate fully covers an orthogonal projection of the switching transistor onto the base substrate. The present disclosure further relates to a method for forming the X-RAY detector.

X-ray detector and method for forming the same

The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.

Light detection substrate, manufacturing method thereof and light detection apparatus

The present application provides a method for manufacturing a microelectrode film. The method includes: forming at least one recess on the carrier substrate by isotropic etching; forming a microelectrode seed pattern in the recess; growing a microelectrode in the recess by using the microelectrode seed pattern; making a first substrate to be in contact with a side of the carrier substrate having the recess thereon; separating the microelectrode from the carrier substrate to transfer the microelectrode onto the first substrate.

Method for manufacturing microelectrode film

A detection substrate and a ray detector are disclosed. The detection substrate includes a base substrate; a plurality of detection pixel circuits, located on the base substrate; a first passivation layer, located on the side, facing away from the base substrate, of the detection pixel circuits; a planarization layer, located on the side, facing away from the base substrate, of the first passivation layer, where the surface of the side, facing away from the first passivation layer, of the planarization layer is a plane; and a plurality of photosensitive devices; where the photosensitive devices are electrically connected to the detection pixel circuits in a one-to-one correspondence through vias penetrating through the first passivation layer and the planarization layer, and each photosensitive device includes a first portion and a second portion.

Detection substrate and ray detector

The present disclosure provides an active pixel sensor and a flat panel detector. The active pixel sensor includes: a light sensing device configured to convert light sensed by the light sensing device into charges and supply the charges to a floating diffusion node; an amplification sub-circuit configured to amplify a signal according to a potential at the floating diffusion node and output the amplified signal through the output terminal; an adjustment sub-circuit configured to adjust, in response to a first control signal, a conversion gain from an amount of the light sensed by the light sensing device to the potential at the floating diffusion node; and a read sub-circuit configured to transmit a voltage of the input terminal of the read sub-circuit to the output terminal of the read sub-circuit according to a scan signal provided by the scan line.

Active pixel sensor and flat panel detector

A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further is a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.

Photodetector, display substrate, and method of manufacturing photodetector

The embodiments of the present disclosure provide a detection substrate and a ray detector, comprising a base substrate; a direct-conversion photosensitive device located on the base substrate; an indirect-conversion photosensitive device located between the base substrate and the layer where the direct-conversion photosensitive device is located; and a reading transistor located between the base substrate and the layer where the indirect-conversion photosensitive device is located. The reading transistor is electrically connected to the direct-conversion photosensitive device and the indirect-conversion photosensitive device respectively.

A drive backplane, a manufacturing method thereof, a detection substrate and a detection device. The drive backplane includes: a base plate and multiple drive modules disposed on the base plate. Each drive module includes a reset transistor, a read transistor, an amplifier transistor and a memory capacitor; the reset transistor is connected to the memory capacitor, the memory capacitor is connected to a photosensor, the amplifier transistor is connected to the memory capacitor, and the read transistor is connected to the amplifier transistor; wherein an active layer in the amplifier transistor is made of amorphous silicon or an oxide semiconductor.

Drive backplane, manufacturing method thereof, detection substrate, and detection device

A display panel includes a thin film transistor layer (), a grating layer (), a transparent anode layer (), an emission layer (), and a colored layer () opposite the emission layer (). The colored layer () may include a plurality of color filters. The grating layer () may be between the thin film transistor layer () and the transparent anode layer (). The grating layer () may include a plurality of blazed gratings corresponding to the plurality of color filters, respectively.

Display panel, fabricating method thereof, and display apparatus

The present disclosure provides a flat panel detector and a driving method thereof. A detection unit includes: a first transistor, a second transistor, a storage capacitor and a photoelectric detection device, and because an active layer of the second transistor is made of amorphous silicon semiconductor materials and an active layer of the first transistor is made of low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials, transmission delay of an electric signal generated by the photoelectric detection device may be reduced by controlling conduction and cut-off of the first transistor and controlling conduction and cut-off of the second transistor.

Flat panel detector and driving method thereof

The present disclosure provides a flat panel detector and a medical image detection device. The flat panel detector includes a base substrate, wherein the base substrate is divided into a plurality of detection units, each detection unit includes a first absorbing layer and a second absorbing layer, both of which are arranged on the base substrate in a laminating manner, the second absorbing layer is located on one side, away from the base substrate, of the first absorbing layer, and an energy level of rays absorbed by the second absorbing layer is smaller than that of rays absorbed by the first absorbing layer; a voltage supply electrode structure; and an output circuit, electrically connected to the voltage supply electrode structure and configured to output a first detection signal of the first absorbing layer and a second detection signal of the second absorbing layer.

Flat panel detector and medical image detection device

A flat panel detector includes a base substrate, a sensing electrode and a bias electrode over the base substrate, and an insulating layer over the sensing electrode and the bias electrode at a side distal from the substrate. A difference between thicknesses of regions of the insulating layer corresponding to the sensing electrode and the bias electrode respectively is not greater than a preset threshold. When a sufficiently high voltage is applied to the insulating layer and turned on, because the thickness thereof is relatively uniform, a dark current generated by the sensing electrode and the bias electrode under the insulating layer is relatively uniform, thereby improving detection accuracy of the flat panel detector.

Flat panel detector and manufacturing method thereof

A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.

Ray detector and ray detection panel

Growing community of inventors

Beijing, China

Jiangbo Chen