Han's Laser Technology Industry Group Co., Ltd.

Jiangang Yin

Yunfeng Gao

Wei Zhu

Guodong Ma

Changhui Zhuang

Yanhua Wang

Jiangang Lu

Fuhai Li

Xiaojun Zhang

Xiao Liu

Hong Chen

Wei Zeng

Jiangang Tang

Zhongqian Li

Xuerui Yuan

Huanyin Xin

Hongjiang Zhang

Lingtian Diao

Yuguo Peng

Zhixian Chen

Provided are a laser cutting device and a laser cutting method. The laser cutting device comprises a beam expanding element provided with a plurality of lens sets, wherein optical axes of the plurality of lens sets are located in the same line and each lens set comprises at least one lens; the beam expanding element is configured to convert an incident beam into a first beam; and a spectroscopic element arranged on a light path of an emitted light of the beam expanding element, and wherein the spectroscopic element is configured to convert the first beam into multiple second beams that are annular and spaced apart from each other.

Laser cutting device and laser cutting method

A method for cutting sapphire comprising a sapphire body and a coating formed on the sapphire body, the method comprising: focusing a first COlaser beam the coating via a COfocusing assembly to remove the coating with a predetermined thickness extending along a first path; wherein dust and debris generated during removal of the coating are removed while the coating is removed; focusing an ultrafast laser beam on the sapphire body via an optical path shaping assembly to form a plurality of restructuring channels distributed along a second path and penetrating through the sapphire; wherein the second path coincides with the first path; scanning, by the second COlaser beam, the sapphire body via a galvanometer focusing assembly, wherein a path of the second COlaser beam scanning the sapphire body via a galvanometer focusing assembly coincides with or deviates from the second path, so that the sapphire cracks along the restructuring channels.

Method and device for cutting sapphire

A laser processing method for a sapphire includes: acquiring an image of the sapphire during processing; performing an edge detection to the image to acquire a coordinate of a crack; determining an offset parameter according to the coordinate of the crack; adjusting a laser processing position according to the offset parameter; and further processing the sapphire in accordance with the adjusted laser processing position.

Laser processing method, apparatus for sapphire and storage medium

The present invention relates to a laser lift-off method of wafer. The method includes the steps as follows: focusing laser in an inside for a wafer () to form a plurality of cracking points (), the plurality of cracking points () are located on a separating surface (); and exerting, under a temperature of &#x2212;400K to 0K, forces with opposite directions to opposite sides of the wafer (), thereby dividing the wafer () into two pieces along the separating surface ().

Laser lift-off method of wafer

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Shenzhen, China

Jiangang Yin