Micron Technology Incorporated

Jiangang Wu

Kishore Kumar Muchherla

Karl David Schuh

Sampath K Ratnam

Mustafa Nazmi Kaynak

Sivagnanam Parthasarathy

Vamsi Pavan Rayaprolu

Qisong Lin

Peter Sean Feeley

Jung Sheng Hoei

Xiangang Luo

Shane G Nowell

Devin M Batutis

Yun Li

Peng Xu

Ashutosh Malshe

James P Crowley

Gil Golov

Mark Ish

Jeffrey S McNeil, Jr

Patrick Robert Khayat

James Fitzpatrick

Shuhui Chen

Abdelhakim Alhussien

Gary F Besinga

Cory M Steinmetz

Pushpa Seetamraju

Hong Lu

Peng-Cheng Chen

Yunqiu Wan

Guang Chang Ye

Shao Chun Shi

Lei Zhou

Giuseppina Puzzilli

Todd A Marquart

Niccolo' Righetti

Nolan Tran

Myoung Jun Go

Jing Sang Liu

Mastafa N Kaynak

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising performing a data integrity check on a source set of memory cells, configured to store a first number of bits per memory cell, to obtain a data integrity metric value; responsive to determining that the data integrity metric value satisfies the threshold criterion, performing an error handling operation on the data stored on the source set of memory cells to generate corrected data; and causing the memory device to copy data the corrected data to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell, wherein the second number of bits per memory cells is greater than the first number of bits per memory cell.

Memory compaction management in memory devices

Methods, systems, and devices for performance control for a memory sub-system are described. A memory sub-system can monitor a backend for writing data to a memory device. The memory sub-system can determine that the bandwidth of the backend satisfies one or more performance criteria that are based on performance between the memory sub-system and a host system. In some embodiments, the memory sub-system can allocate a quantity of slots of a buffer to a frontend of the memory sub-system based on determining that the bandwidth of the backend satisfies the one or more performance criteria. Slots of the buffer can be configured to receive data from the frontend for writing to the memory device by the backend.

Performance control for a memory sub-system

A processing device access a command to program data to a page in a block of a memory device. The processing device determines whether the page is a last remaining open page in the block. The processing device accesses a list that indicates enablement of a function to apply read level offsets to one or more open blocks in the memory device. The processing device determines the list includes an entry that matches to the block. The entry indicates enablement of the function to apply read level offsets to the block. The processing device disables the function based on determining the page is a last remaining open page in the block. The processing device adds the command to a prioritized queue of commands. The memory device executes commands from the prioritized queue in an order based on a priority level assigned to each command.

Automatic wordline status bypass management

Methods, systems, and devices for a read counter for quality of service design are described. First commands may be assigned to a first queue of a memory die of a memory sub-system, wherein the first queue is associated with a first priority level. The memory die may include a second queue associated with a second priority level different from the first priority level, the second queue comprising one or more second commands assigned. Based at least in part on a counter associated with the first queue and the first and second priority levels, it may be determined that a threshold number of the first commands of the first queue have issued without a command from the one or more second commands having issued. A command from the second commands may issue before issuing a next command of the first commands based at least in part on the counter.

Read counter for quality of service design

A system includes a memory device and a processing device communicatively coupled to the memory device. The processing device is to write data to a number of groups of memory cells of the memory device in a physically non-contiguous manner. The processing device is further to track a sequence in which the number of groups of memory cells were written with the data. In response to a trigger event, the processing device is further to identify at least a portion of the number of groups of memory cells having data received over a predefined period preceding the trigger event based at least in part on the tracked sequence.

Memory sub-system write sequence track

A system includes a memory device and a processing device coupled to the memory device. The processing device can assign each of a plurality of superblocks to one of a plurality of groups. The processing device can monitor an order that each of the groups have been written to. The processing device can write data to a first block of a first superblock of a first of the plurality of groups.

Memory sub-system media management groups

A system includes a memory device including a plurality of groups of memory cells and a processing device that is operatively coupled to the memory device. The processing device is to receive a request to determine a reliability of the plurality of groups of memory cells. The processing device is further to perform, in response to receipt of the request, a scan operation on a sample portion of the plurality of groups of memory cells to determine a reliability of the sample portion that is representative of the reliability of the plurality of groups of memory cells.

Memory sub-system scan

A method includes initiating a voltage calibration scan with respect to a block of a memory device, wherein the block is assigned to a first bin associated with a first set of read voltage offsets, and wherein the first bin is designated as a current bin, measuring a value of a data state metric for the block based on a second set of read voltage offsets associated with a second bin having an index value higher than the first bin, determining whether the value is less than a current value of the data state metric measured based on the first set of read voltage offsets, and in response to determining that the value is less than the current value, designating the second bin as the current bin.

Voltage calibration scans to reduce memory device overhead

Methods, systems, and devices for full multi-plane operation enablement are described. A flash controller can determine that a first plane of a set of planes of a memory die is an invalid plane. The flash controller can issue a single descriptor associated with a multi-plane operation for the set of planes of the memory die. The single descriptor can include a plurality of commands for the multi-plane operation in which the first command of the plurality of commands can be a duplicate of a second command of the plurality of commands based on the first plane being the invalid plane. In some cases, a negative-and (NAND) controller can receive the single descriptor associated with the multi-plane operation for the set of planes of a memory die. The NAND controller can issue a plurality of commands for the multi-plane operation based on receiving the single descriptor.

Full multi-plane operation enablement

Method includes identifying, while programming sets of pages to dice of memory device, multiple sets of pages experiencing a variation in temporal voltage shift satisfying a threshold criterion; partitioning a set of pages of the multiple sets of pages into a set of fixed-length partitions; storing, in a metadata table, a value to indicate a size of each fixed-length partition; receiving a read operation directed at a page of the set of pages; determining, based on a logical block address of the read operation and on the value that indicates the size of each fixed-length partition, a partition of the set of fixed-length partitions to which the read operation corresponds; and searching within the metadata table to determine a block family to which the partition is assigned, wherein the searching is based on a first value associated with the set of pages and a second value associated with the partition.

Selective partitioning of sets of pages programmed to memory device

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising selecting a source set of memory cells of the memory device, wherein the source set of memory cells are configured to store a first number of bits per memory cell; performing a data integrity check on the source set of memory cells to obtain a data integrity metric value; determining whether the data integrity metric value satisfies a threshold criterion; and responsive to determining that the data integrity metric value fails to satisfy the threshold criterion, causing the memory device to copy data from the source set of memory cells to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell.

A processing device of a memory sub-system is configured to sort a plurality of blocks of the memory device; identify, based on scanning of a first block at a first location of the plurality of sorted block, a first voltage bin associated with the first block; identify, based on scanning of a second block at a second location of the plurality of sorted blocks, a second voltage bin associated with the second block; and responsive to determining that the first voltage bin matches the second voltage bin, assign the first voltage bin to each block that is located between the first location of the plurality of sorted blocks and the second location of the plurality of sorted blocks.

Managing voltage bin selection for blocks of a memory device

A request to perform a write operation at a memory device is received. Current wordline start voltage (WLSV) information associated with a particular memory segment of the plurality of memory segments is retrieved. The write operation is performed on the particular memory segment. In a firmware record in a memory sub-system controller, information is stored indicative of a last written memory page associated with the particular memory segment on which the write operation is performed. The firmware record is managed in view of the information indicative of the last written memory page associated with the performed write operation. Each entry of the firmware record comprises one or more identifying indicia associated with a respective memory segment, at least one of the identifying indicia being a wordline start voltage (WLSV) associated with the respective memory segment.

Memory sub-system management based on dynamic control of wordline start voltage

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Milpitas, CA, United States of America

Jiangang Wu