Semiconductor Manufacturing International (shanghai) Corporation

Signify Holding B.v.

Huawei Digital Power Technologies Co., Ltd.

Shanghai Liangxin Electrical Co., Ltd

Jiang Zhang

Xian Jay Ning

Hanming Wu

John Chen

Hao Wang

Jian Shi

Xiufeng Zhang

Xiaokang Tian

Jia Fei

A rotary switch includes an operating mechanism, an on-off apparatus, and a tripping component. The operating mechanism includes an energy storage component and a drive component. The drive component is in driving connection with the energy storage component and the on-off apparatus. The energy storage component includes a latch and an energy storage spring that cooperates with the latch. The energy storage spring can be connected to the latch and the drive component in a snap-fit manner, such that rotation of the drive component stores energy in the energy storage component. Rotation of the drive component also drives the on-off apparatus to an on position. The latch the tripping component interact such that the latch locks or unlocks the energy storage spring.

Rotary switch

A lighting unit which comprises a lens arrangement over a LED module is provided. The lens arrangement comprises a plate having at least one lens integrally formed by the plate for positioning over a substrate of the LED module, and at least one magnifying component integrally formed by the plate. The LED module substrate has an inspection region which is inspected through the magnifying component, so as to enable determination of a spacing between the lens arrangement and the substrate by viewing an image of the marker arrangement created by the at least one magnifying component at a given viewing location. A luminaire is also provided, which luminaire comprises a housing and the lighting unit mounted within the housing, wherein the lens arrangement () forms the light output window of the luminaire.

Lighting unit and luminaire

A structure using pure silicon dioxide hard marsk for gate pattern. In an embodiment, the present invention provides a partially completed semiconductor integrated circuit device. The device has a semiconductor substrate and a dielectric layer overlying the semiconductor substrate. The device has a gate structure including edges and a substantially pure silicon dioxide mask structure overlying the gate structure. A thickness ranging from about 400 to about 600 Angstroms of the substantially pure silicon dioxide mask structure is included. The device has a dielectric layer forming sidewall spacers on the edges of the gate structure to protect the gate structure including the edges and an exposed portion of the pure silicon dioxide mask structure overlying the gate structure. The device has an epitaxially grown fill material in an etched source region and an etched drain region.

Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors

A partially completed semiconductor integrated circuit device. The device has a semiconductor substrate and a dielectric layer overlying the semiconductor substrate. The device has a gate structure including edges and a substantially pure silicon dioxide mask structure overlying the gate structure. A thickness ranging from about 400 to about 600 Angstroms of the substantially pure silicon dioxide mask structure is included. The device has a dielectric layer forming sidewall spacers on the edges of the gate structure to protect the gate structure including the edges and an exposed portion of the pure silicon dioxide mask structure overlying the gate structure. The device has an epitaxially grown fill material (e.g., silicon/germanium, silicon carbide) in an etched source region and an etched drain region. Preferably, the etched source region and the etched drain region are coupled to the gate structure. The device has a strained channel region between the filled source region and the filled drain region from at least the fill material formed in the etched source region and the etched drain region.

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Shanghai, China

Jiang Zhang