Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Jiang-Tao Wang

Shou-Shan Fan

Kai-Li Jiang

Peng Liu

Qing-Yu Zhao

Dong-Qi Li

Wen-Yun Wu

Yu-Jun He

Xin-He Wang

Yang Wei

Xiang Jin

Wei Zhao

Tian-Yi Li

Bing-Yu Xia

A method of making carbon nanotubes is provided, the method includes depositing a catalyst layer on a substrate, placing the substrate having the catalyst layer in a reaction furnace, heating the reaction furnace to a predetermined temperature, introducing a carbon source gas and a protective gas into the reaction furnace to grow a first carbon nanotube segment structure comprising a plurality of metallic carbon nanotube segments, and applying a pulsed electric field to grow a second carbon nanotube segment structure from the plurality of metallic carbon nanotube segments, where the pulsed electric field is a periodic electric field including a plurality of positive electric field pulses and a plurality of negative electric field pulses alternately arranged, and the second carbon nanotube segment structure includes a plurality of semiconducting carbon nanotube segments.

Method for making carbon nanotubes

The disclosure relates to a method for making charged nanoparticles, the method includes: providing a solution with a first solute; atomizing the solution into micro-scaled droplets; providing a charged electrode with at least one through-hole, a negative or positive electric potential is applied to the electrode; allowing the micro-scaled droplets to pass through the at least one through-hole.

Method for making charged nanoparticles

A method for making a carbon fiber film includes suspending a carbon nanotube film in a chamber. A negative voltage is applied to the carbon nanotube film. A carbon source gas is supplied into the chamber, wherein the carbon source gas is cracked to form carbon free radicals, and the carbon free radicals are graphitized to form a graphite layer on the carbon nanotube film.

Carbon fiber film and method for making the same

A method for making carbon nanotube film includes providing a growth substrate having a first surface and a second surface opposite to the first surface. A catalyst layer is placed on the first surface. The growth substrate and the catalyst layer are placed in a reaction chamber. The carbon source gas and hydrogen are supplied into the reaction chamber at a growth temperature of a plurality of carbon nanotubes. An electric field is applied to the growth substrate, wherein an electric field direction of the electric field is from the first surface to the second surface. After the plurality of carbon nanotubes fly away from the growth substrate, the electric field is stopped applying to the growth substrate, and the carbon source gas and hydrogen are continually supplied into the reaction chamber.

Method for making carbon nanotube film

A light detection element including: a carbon nanotube structure; a first electrode and a second electrode, electrically connected to the carbon nanotube structure; wherein the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, one of the two metallic carbon nanotube segments is electrically connected to the first electrode, the other one of the two metallic carbon nanotube segments is electrically connected to the second electrode.

Light detector

A method of making carbon nanotubes with equal or other ratio of semiconductive to conductive elements in integrated form includes: depositing a catalyst layer on a substrate and heating same in a reaction furnace to a predetermined temperature. A carbon source gas and a protective gas are introduced to grow a plurality of carbon nanotube segments, some carbon nanotube segments being conductive metallic. A positive electric field is applied to the plurality of carbon nanotube segments, wherein the catalyst layer is positively charged and the positive electric field is reversed to the negative, to grow a second carbon nanotube segment structure from the metallic carbon nanotube segments. The direction of the negative electric field is along a second direction and the second carbon nanotube segment structure then comprises a plurality of semiconducting carbon nanotube segments.

The disclosure relates to a device for making charged nanoparticles, the device includes: an atomizer configured to atomize a solution into micro-scaled droplets; a first electrode and a second electrode substantially parallel with and spaced from each other, a power supply configured to apply a voltage between the first electrode and the second electrode, at least one first through-hole is defined on the first electrode and at least one second through-hole is defined on the second electrode to allow the micro-scaled droplets to pass through.

Device for making charged nanoparticles

The disclosure relates to a method for making a carbon nanotube structure, comprising the following steps of providing a carbon nanotube array formed on a surface of a substrate; drawing a first carbon nanotube film from the carbon nanotube array, wherein the first carbon nanotube film comprises a first end connected to the carbon nanotube array and a second end opposite to the first end; providing an elastic rod and fixing the second end of the first carbon nanotube film to a first portion of the elastic rod, wherein the elastic rod is curved toward the carbon nanotube array; and rotating the elastic rod around a rotational axis which coincides with a center axis of the elastic rod, wherein the elastic rod is curved toward the carbon nanotube array during the rotation of the elastic rod.

Method for making carbon nanotube structure

The disclosure relates to a method for making a carbon nanotube structure, comprising the following steps of: providing a carbon nanotube array formed on a surface of a substrate; drawing a first carbon nanotube film from the carbon nanotube array, wherein the first carbon nanotube film comprises a first end connected to the carbon nanotube array and a second end opposite to the first end; providing an elastic rod and fixing the second end of the first carbon nanotube film to a first portion of the elastic rod, wherein the elastic rod is curved away from the carbon nanotube array; and rotating the elastic rod around a rotational axis which coincides with a center axis of the elastic rod, wherein the elastic rod is curved away from the carbon nanotube array during rotation the elastic rod.

The disclosure relates to a device for making carbon nanotube structure. The device includes: an elastic rod including a first end and a second end opposite to the first end; and a controller connected to the first end and the second end respectively, wherein the controller is configured to rotate the elastic rod around a rotational axis which coincides with a center axis of the elastic rod.

Device for making carbon nanotube structure

A method for making carbon fiber film includes growing a carbon nanotube array on a surface of a growth substrate. A carbon nanotube film is pulled out from the carbon nanotube array, and pass through a reaction room. A negative voltage is applied to the carbon nanotube film. A carrier gas and a carbon source gas are supplied to the reaction room to form graphite sheets on the carbon nanotube film.

Method for making carbon fiber film

A thin film transistor including: an insulating substrate; a gate electrode, located on the insulating substrate; a gate insulating layer, located on the gate electrode; a carbon nanotube structure, located on the gate insulating layer; wherein the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, one of the metallic carbon nanotube segments is used as a source electrode, the other one of the metallic carbon nanotube segments is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel.

Thin film transistor with carbon nanotubes

The disclosure relates to a method for detecting surface electric field distribution of nanostructures. The method includes the following steps of: providing a sample located on an insulated surface of a substrate; spraying first charged nanoparticles to the insulated surface; and blowing vapor to the insulated surface to observe a distribution of the first charged nanoparticles via an optical microscope.

Method for detecting surface electric field distribution of nanostructures

A carbon nanotube array with equal or other ratio of semiconductive to conductive elements in integrated form including: a plurality of carbon nanotubes arranged in an array, wherein each carbon nanotube includes a semiconducting carbon nanotube segment and a metallic carbon nanotube segment, and the semiconducting carbon nanotube segment and the metallic carbon nanotube segment are connected with each other.

Carbon nanotube array

The disclosure relates to a method for calculating surface electric field distribution of nanostructures. The method includes the following steps of: providing a nanostructure sample located on an insulated layer of a substrate; spraying first charged nanoparticles to the insulated surface; blowing vapor to the insulated surface and imaging the first charged nanoparticles via an optical microscope, recording the width w between the first charged nanoparticles and the nanostructure sample, and obtaining the voltage U of the nanostructure sample by an equation.

Growing community of inventors

Beijing, China

Jiang-Tao Wang