Wuhan China Star Optoelectronics Technology Co., Ltd.

Jianfeng Yuan

Zhifu Li

Gege Zhou

Fei Ai

Wei Zhou

Jiyue Song

Dong Tian

Guowei Zha

Dewei Song

Chunpeng Zhang

Fan Gong

Fei Al

Shiyu Long

Congxing Yang

An embodiment of the present application discloses an array substrate and a liquid crystal display panel. The array substrate uses a first barrier layer including a first aperture in an aperture region. The first barrier layer is at least correspondingly disposed in a thin film transistor disposing region and a gate driver on array circuit region. The first barrier layer is configured to block the alkaline cation from spreading along a direction to the active layer. Along a direction at a right angle from the substrate to the active layer, a depth by which the alkaline cation enters the first barrier layer is less than or equal to 20 Å.

Array substrate and liquid crystal display panel

A backlight module and a display panel are provided. The display panel includes a display panel main body and a backlight module. The backlight module includes a light guide, a first reflector, and a light source. By arranging the light source in a receiving cavity of the light guide, a width of a lamp socket of the backlight module is reduced, and a light effect of the lamp socket of the backlight module is improved.

Backlight module and display panel

The present application provides a display panel and a display device. The display panel includes a plurality of pixel units, wherein each of the pixel units includes a sub-pixel, the sub-pixel includes a first micro-LED chip, and in a top view, a gap is provided between adjacent ones of the first micro-LED chips; and a functional element disposed at the gap, wherein a function of the functional element is different from a display function of the sub-pixel, in order to improve integration of the display panel, increase an added value of the display panel, and save a space of the whole machine.

Display panel and display device

A light-sensitive sensor, an array substrate, and an electronic equipment are provided. The light-sensitive sensor includes a third metal layer, a second semiconductor layer, and a fourth metal layer. The third metal layer includes a second gate. The second semiconductor layer includes conductive portions, and the conductive portions are disposed at both ends of the second semiconductor layer. The fourth metal layer disposed on the second semiconductor layer, and the fourth metal layer includes a second source and a second drain.

Light-sensitive sensor, array substrate, and electronic equipment

A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

Positive-intrinsic-negative (PIN) photosensitive device, manufacturing method thereof, and display panel

Growing community of inventors

Wuhan, China

Jianfeng Yuan