Quanzhou Sanan Semiconductor Technology Co., Ltd.

Xiamen Sanan Optoelectronics Technology Co., Ltd.

Luminus(xiamen) Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Jianfeng Yang

Xiaoqiang Zeng

Shaohua Huang

Canyuan Zhang

Lixun Yang

Shao-Hua Huang

Shao-hua Huang

Linrong Cai

Kaiqing Xu

Kuowei Ho

Zechao Huang

Bosong Chen

Kunte Lin

A light-emitting device includes a number (N) (not smaller than two) of light-emitting units, a interconnect structure connecting the light-emitting units in series, first and second electrodes, and an auxiliary electrode structure. The light-emitting units each having an light-emitting stack having first and second semiconductor layers of opposite doping types and an active layer. The first and second electrodes are respectively connected to the first semiconductor layer of a first light-emitting unit and the second semiconductor layer of an Nlight-emitting unit. The auxiliary electrode structure is connected to the light-emitting stack of at least one of the light-emitting units.

Light-emitting device and method for making the same

A light-emitting device includes a lead frame having a first surface on which a patterned conductive layer is provided, and a light-emitting element. The light-emitting element includes an insulating substrate formed on the first surface, a plurality of light-emitting units formed on the insulating substrate, at least one first electrode, at least one second electrode and at least a pair of bonding wires. The first and second electrodes are respectively placed in electrical connection with a first one and a second one of the light-emitting units, and are disposed outward of the light-emitting units. Each of the pair of bonding wires is disposed to electrically connect a respective one of the first and second electrodes to the patterned conductive layer.

Light-emitting device having light-emitting units including epitaxial structure and conductive structure

A light-emitting chip includes a light-emitting unit, first and second electrode units. The light-emitting unit includes first and second conductivity type semiconductor layers and an active layer. The first electrode unit includes two first electrodes which are spaced apart from each other by a first distance, and which are electrically connected to the first conductivity type semiconductor layer. The second electrode unit includes two second electrodes electrically connected to the second conductivity type semiconductor layer. The first and second electrode units are spaced apart from each other by a second distance, and the first distance is greater than the second distance.

Light-emitting chip and device using the same

A light emitting device includes at least one light emitting unit that includes an insulating layer, a first electrically conductive layer, and a semiconductor layer structure having at least one recess. The first electrically conductive layer and the insulating layer extend into the recess. A contact area between a conductive protrusion portion of the first electrically conductive layer and a first-type semiconductor layer of the semiconductor layer structure is larger than 1.5% of an area of a bottom surface of the first-type semiconductor layer. A method for producing the light emitting device is also disclosed.

Light emitting device and production method thereof

A light emitting diode includes a semiconductor layer sequence stack, a reflective polarizing layer and a diffuse reflection structure. The semiconductor layer sequence stack includes first and second semiconductor layers, and a light emitting layer disposed therebetween. The reflective polarizing layer is disposed on the semiconductor layer sequence stack. The diffuse reflection structure is disposed on the light emitting layer opposite to the reflective polarizing layer. A light emitting device including the light emitting diode, and a projector including the light emitting device are also provided.

Light emitting diode, light emitting device and projector device

Light-emitting device and method for manufacturing the same

A light emitting device includes at least one light emitting and connecting unit that includes an epitaxial layer structure and a metallic connecting layer structure, and an insulating substrate that has a main substrate body and first and second contact members. The connecting layer structure interconnects the epitaxial layer structure and the main substrate body, and is completely plane at least right under the epitaxial layer structure. The contact members extend from a first surface to a second surface on the main substrate body, and are disposed outside an imaginary projection of the epitaxial layer structure on the main substrate body. The first contact member is electrically connected with the connecting layer structure. Alight emitting apparatus including the device is also disclosed.

Light emitting device and light emitting apparatus

A light-emitting diode (LED) chip includes a semiconductor epitaxial structure, an insulating substrate, a first metal layer, and a second metal layer. The semiconductor epitaxial structure includes a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a light-emitting layer interposed between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The insulating substrate has two opposite surfaces, and the first and second metal layers are respectively disposed on the two surfaces of the insulating substrate. An LED device and an LED lamp including the LED chip are also disclosed.

Growing community of inventors

Xiamen, China

Jianfeng Yang