No. 24 Research Institute of China Electronics Technology Group Corporation

Chongqing Gigachip Technology Co. Ltd.

China Electronics Technology Group Corporation No. 24 Research Institute

Congqing Gigachip Technology Co., Ltd.

Jianan Wang

Dongbing Fu

Guangbing Chen

Liang Li

Ruzhang Li

Ting Li

Yong Zhang

Daiguo Xu

Yabo Ni

Yuxin Wang

Gangyi Hu

Xiaofeng Shen

Can Zhu

Lu Liu

Rongbin Hu

Huaiqiang Yu

Chao Chen

Tao Liu

Yan Wang

Hequan Jiang

Zhengping Zhang

Mingyuan Xu

Xi Chen

Xingfa Huang

Xu Wang

Minming Deng

Zhou Yu

Hanfu Shi

Kaizhou Tan

Yonghui Yang

Jun Liu

Zhaohuan Tang

Yi Zhong

Yong Liu

Kunfeng Zhu

Ziqiang Yi

Gang Zhou

Dong Tang

Ning Tang

Zhimei Yang

Min Gong

Jiahao Peng

Yang Cao

A method for correcting an analog-to-digital converter includes the following steps: extracting gain errors and weight errors of all conversion stages of an analog-to-digital converter; performing first correction on the analog-to-digital converter based on the gain errors and the weight errors; extracting jitter errors of all conversion stages of the analog-to-digital converter after the first correction; and performing a second correction on the analog-to-digital converter based on the jitter errors. According to the disclosure, the gain errors, the weight errors, and the jitter errors of all conversion stages are successively extracted, and then the analog-to-digital converter is corrected. Precision after the corrections is higher. An actual weight of each quantization unit at each conversion stage, an actual inter-stage gain of each conversion stage and an actual weight of jitter are extracted, impact of a jitter weight is eliminated during outputting, and a signal-to-noise ratio of analog-to-digital conversion is increased.

Method for correcting analog-to-digital converter

A method for calibrating an analog-to-digital converter includes the following steps: conducting an initial performance test and judgement on the analog-to-digital converter; if the initial performance test succeeds, performing a pre-trimming and judgement on the analog-to-digital converter; if the pre-trimming succeeds, performing an error extraction on the analog-to-digital converter, obtaining errors of conversion stages of the analog-to-digital converter; performing an error soft trimming and test on the analog-to-digital converter according to the errors of the conversion stages; and if the error soft trimming and test of the analog-to-digital converter succeed, performing an error hard trimming and test on the analog-to-digital converter according to the errors of the conversion stages.

Method for calibrating analog-to-digital converter

Embodiments of the disclosure provide a circuit, chip, system, and method for eliminating random perturbation. The circuit includes a weight calculating module for receiving digital signals and random perturbation digital quantity, using least mean square error algorithm to calculate weight deviation iteration coefficient based on digital signal and digital quantity, and updating perturbation weight in real-time according to weight deviation iteration coefficient; and a perturbation eliminating module for eliminating perturbation signal in output digital signal of quantizer according to perturbation weight updated in real-time and updating perturbation weight in real-time according to weight deviation iteration coefficient, and then calculating current perturbation weight in real time to realize self-calibration of perturbation weight. Even if the manufacturing process or working environment of the current chip changes, perturbation weight can be dynamically adjusted, to ideally eliminate perturbation signal in digital signal.

Circuits, chips, systems and methods for eliminating random perturbation

The present disclosure provides a polysilicon resistor, a method for manufacturing the same, and a successive approximation register analog-to-digital converter. A polysilicon resistor includes a first silicon substrate; a first silicon oxide layer disposed on the first silicon substrate; a second silicon substrate disposed on the first silicon oxide layer, wherein an insulating isolation structure extends through the second silicon substrate and divides the second silicon substrate into a plurality of substrate isolation areas separated from each other; a second silicon oxide layer disposed on the second silicon substrate; and a polysilicon resistor layer disposed on the second silicon oxide layer, wherein the polysilicon resistor layer includes a plurality of polysilicon resistor blocks separated from each other, the plurality of polysilicon resistor blocks is arranged in one-to-one correspondence with the plurality of substrate isolation areas, and the plurality of polysilicon resistor blocks are connected in series.

Polysilicon resistors, methods for manufacturing the same, and successive approximation register analog-to-digital converter

SAR ADC and sampling method based on single-channel TIS. The SAR ADC comprises: a capacitor array comprising a weight capacitor and a compensation capacitor, a first switch array, a second switch array, a channel switch group and a sampling switch; when in a sampling state: a lower plate of the weight capacitor is connected to an input voltage by means of the first switch array, and an upper plate of the capacitor array is connected to a common mode voltage by the sampling switch and the channel switch group; when in a successive approximation state: the lower plate of the weight capacitor is connected to a reference voltage by the second switch array. Input signals are sampled by using a unified to sampling switch, which solves the problem in the traditional technology that sampling moments are mismatched due to different sampling signals in each time-interleaved channel.

SAR ADC and sampling method based on single-channel time-interleaved-sampling

The present disclosure provides an oscillating circuit and an electronic device; the oscillating circuit includes a capacitor charging and discharging circuit unit, a voltage comparison circuit unit and a threshold voltage generation circuit unit; the oscillating circuit uses the capacitor charging and discharging and the hysteresis effect of the capacitor charging and discharging circuit unit to achieve oscillation based on the negative feedback regulation constituted by the voltage comparison circuit unit and the threshold voltage generation circuit unit, which is different from the traditional oscillating circuit based on capacitance and inductance; the oscillating circuit does not adopts inductors, has relatively low power consumption, and outputs oscillation signals with frequencies that vary with currents, and when the oscillating circuit is used to provide clock signals for the sensor, it can be integrated with a sensor signal processing circuit to realize the miniaturization and integration of the sensor system.

Oscillating circuit and electronic device

The present disclosure provides a differential clock cross point detection circuit and a detection method. The detection circuit includes: a first MOS transistor (M), a second MOS transistor (M) and a capacitor (C); a drain of the first MOS transistor (M) is connected to a negative terminal (CLK&#x2212;) of a differential clock, a gate of the first MOS transistor (M) is connected to a positive terminal (CLK+) of the differential clock, and a source of the first MOS transistor (M) is connected to a drain of the second MOS transistor (M); a gate of the second MOS transistor (M) is connected to the negative terminal (CLK&#x2212;) of the differential clock, and a source of the second MOS transistor (M) is connected to an output terminal through a node; one terminal of the capacitor (C) is connected to a node (A), and the other terminal of the capacitor (C) is grounded.

Differential clock cross point detection circuit and detection method

A semiconductor cell structure and power semiconductor device, wherein, the semiconductor cell structure includes: a highly-doped semiconductor material region, an epitaxial layer, a dielectric insulating layer, a semi-insulating material, and an active device region, a deep groove is further etched on the epitaxial layer, the deep groove vertically extends into the highly-doped semiconductor material region, the dielectric insulating layer is formed on a side wall inside the deep groove, and the deep groove is filled with the semi-insulating material. The cell structure can be applied to the power semiconductor device during actual application, the present invention dramatically reduces the difficulty of the process implementation, relaxes the harsh requirements on charge balance, broadens the tolerant charge mismatch percentage by approximately ten times, and also improves the long-term reliability of normal operation of the device cell at the same time.

Semiconductor cell structure and power semiconductor device

A high-speed low-power-consumption trigger, which comprises a control signal generation circuit, an enabling unit, and a latch structure. The latch structure comprises two input ends, two output ends, two enabling ends, a second enabling end, and a ground end. The enabling unit comprises two enabling circuits. An output signal X of the control signal generation circuit and an external control signal D serve as input signals of the first enabling circuit. An output end of the first enabling circuit is connected to the first enabling end. The output signal X of the control signal generation circuit and a phase-inverted signal DB of the external control signal D serve as input signals of the second enabling circuit. An output end of the second enabling circuit is connected to the second enabling end.

High-speed low-power-consumption trigger

Growing community of inventors

Chongqing, China

Jianan Wang