Lam Research Corporation

Jianan Hou

Carlo Waldfried

Ivan Berry

Orlando Escorcia

Shijian Luo

Keping Han

A method for processing a substrate includes arranging a substrate including masked portions and unmasked portions in a process chamber; creating plasma in a process chamber; supplying a passivation gas mixture that includes nitrogen or carbon to create a plasma passivation gas mixture; exposing a substrate to the plasma passivation gas mixture to create a passivation layer on the unmasked portions of the substrate; supplying a stripping gas mixture that includes oxygen to the plasma to create a plasma stripping gas mixture; exposing the substrate to the plasma stripping gas mixture to strip at least part of the masked portions and at least part of the unmasked portions; and repeating creating the passivation layer and the stripping to remove a predetermined amount of the masked portions.

Growing community of inventors

Lexington, MA, United States of America

Jianan Hou