Taiwan Semiconductor Manufacturing Comp. Ltd.

Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Ohaus Instruments (changzhou) Co., Ltd.

Siemens Aktiengesellschaft

Ohaus Instruments (shanghai) Co., Ltd.

Gm Global Technolgoy Operations, Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Gemalto Sa

Tenneco Automotive Operating Company Inc.

Nanjing University

Wieland-werke Ag

Wolverine Tube, Inc.

Jiangsu Huaiyu Pharmaceutical Co., Ltd.

TSMC China Company, Limiied

Jian Yuan Wu

Jiech-Fun Lu

Yu-Lung Yeh

Ching-Chung Su

Huan Yun Zhang

Ming-Chi Wu

Chi-Yuan Wen

Chun-Chieh Fang

Huawei Zhang

Che-Hsiang Hsueh

Feng Han

Shuai Zhang

Lile Liu

Qing Duan

Jianying Cao

Zhong Luo

Yalin Qiu

Lei Zhang

Peng Wang

Wen Xu

Michael A Golin

Xu Wu

Wei Zhang

Yue Zhuo

Lina Xu

Qian Wang

Peggy Wang

Hong Cao

Xiaowen Dai

Jiang L Du

Jimmy Qi

Shaoping Hu

Chao Long

Tatchi Teddy Yang

Xinxiu Yang

Gaofeng Fan

Meiling Wang

Li Zhao Ma

Shiyong Gong

Rong Yuan

Lian-Jie Li

Yizhen Yang

Fangyuan Zhao

Qin Zhong

Jianqiang Fan

Anzhou Wu

Zhi Min Dong

Zhong-Hao Chen

Xiaohui Shao

Ying Han

Richard Liu

Yuandong Wang

Honglei He

Xiaohong Yao

Lijuan Jia

Lijuan Hao

Liuyan Wu

Biao Du

Stewart Leung

Ping Lee

Cedric Collomb

Simon Choi

Huanyun Zhang

Ningning Song

Xiaojiao Bian

Peipei Wei

Yajun Huang

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate having a first region and a second region; first nanowires formed over the first region of the semiconductor substrate; second nanowires with a diameter smaller than a diameter of the first nanowires formed over the second region of the semiconductor substrate; a first gate layer formed around the first nanowires; and a second gate layer formed around the second nanowires.

Semiconductor structure

Disclosed in the present invention are an antibody targeting LAG-3, a preparation method therefor and the use thereof. In particular, disclosed in the present invention is a novel monoclonal antibody targeting LAG-3. Also disclosed in the present invention is a method for the preparation of the monoclonal antibody. The monoclonal antibody of the present invention is capable of binding LAG-3 antigens with high specificity, and has very high affinity and significant activities such as anti-tumor activity.

Anti-human LAG-3 monoclonal antibody and use thereof

A method and apparatus for determining a trajectory of a robot's end effector are disclosed. In an embodiment, the apparatus includes a force obtaining device to obtain a collision force of the end effector of the robot, caused by a collision of the end effector upon the collision being detected; and a trajectory determining device to determine a second trajectory of the end effector based on the collision force of the end effector obtained, and based on a recorded first trajectory of the end effector. The recorded first trajectory is a trajectory recorded before the collision, and the second trajectory is a trajectory determined after the collision. As such, an efficient protection for the robot and its working environment at the moment of collision may be achieved.

Method, apparatus and system for determining a trajectory of a robot's end effector

An integrated circuit includes a bias pad within a buried oxide layer. A layer of semiconductor material is over the buried oxide layer. The layer of semiconductor material includes a doped regions for a transistor. An inter layer dielectric (ILD) material covers the layer of semiconductor material and a gate electrode for the transistor. The integrated circuit includes one or more bias contacts extending through the ILD material within an isolation region in the layer of semiconductor material. Bias contacts electrically connect to the first bias pad. The isolation structure insulates the one or more bias contacts from the doped regions of the transistor within the layer of semiconductor material. The one or more bias contacts are electrically connected to an interconnection structure of the integrated circuit which is configured to connect a voltage source to the bias pad.

Semiconductor device having buried bias pads

A method of manufacturing a super junction structure includes etching a material to define a trench, wherein the trench has a tapered profile. The method further includes implanting dopants into sidewalls and a bottom surface of the trench to define a doped region, wherein the doped region surrounds the trench. The method further includes depositing an undoped material into the trench. The method further includes performing a thermal process, wherein the thermal process drives the dopants from the doped region into the undoped material to form a conductive pillar in the trench.

Method of manufacturing a super junction structure and super junction structure

Semiconductor structures and fabrication methods are provided. An exemplary fabrication method includes providing a semiconductor substrate having a first region and a second region; forming first nanowires over the first region of the semiconductor substrate; forming second nanowires with a diameter smaller than a diameter of the first nanowires over the second region of the semiconductor substrate; forming a first gate layer around the first nanowires; and forming a second gate layer around the second nanowires.

Semiconductor structure and fabrication method

A servo driver includes: a driver, a pulse conversion module and a pulse interface. The pulse conversion module is connected between the pulse interface and the driver, and the pulse conversion module converts the type of a pulse control signal received by the pulse interface from an upper computer or a PLC and then outputs same to the driver. The type of the pulse control signal includes at least one of a clockwise and counter-clockwise pulse control type, a pulse plus direction control type and an AB-phase input control type. In an embodiment, the pulse conversion module is used to convert the type of the pulse control signal from the upper computer or the PLC, so that the driver can be compatible with an upper computer or a PLC having a different control signal type.

Servo driver

The present invention discloses IL-13 antibody, method of its preparation and use thereof. The IL-13 antibody comprises one or more of heavy chain CDR1, heavy chain CDR2 and heavy chain CDR3 of heavy chain variable region of the IL-13 antibody, and/or one or more of light chain CDR1, light chain CDR2, and light chain CDR3 of light chain variable region of the IL-13 antibody. The IL-13 antibody has a high affinity and can significantly inhibit the secretion of thymus activation-regulated chemokine and periostin as well as the expression of vascular cell adhesion molecule-1 induced by IL-13, it can significantly inhibit airway hyperresponsiveness in mice induced by IL-13, and therefore can be used in the preparation of drugs for preventing or treating IL-13 expression or dysfunction related diseases.

IL-13 antibody and preparation method and use thereof

A method for fabricating a semiconductor device includes forming an initial fin structure on a semiconductor substrate; and forming a plurality of first dummy gate structures and a second dummy gate structure across the initial fin structure. The second dummy gate structure is formed between two adjacent first dummy gate structures, and includes a second dummy-gate-structure body. The method also includes forming a trench in the initial fin structure by etching and removing the second dummy-gate-structure body and a portion of the initial fin structure under the second dummy-gate-structure body. The trench divides the initial fin structure to form two fin structures. The method further includes forming a trench isolation layer in the trench and an interlayer dielectric layer on the plurality of first dummy gate structures. The interlayer dielectric layer covers a portion of the semiconductor substrate and the two fin structures adjacent to the trench.

Semiconductor devices and fabrication methods thereof

A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Semiconductor structure and manufacturing method thereof

Semiconductor device and fabrication method are provided. The fabrication method includes: providing a base substrate having a first gate dielectric film thereon; forming a first gate electrode layer on a portion of the first gate dielectric film; forming an offset sidewall film on the first gate dielectric film and covering sidewalls of the first gate electrode layer; forming lightly doped regions in the base substrate on sides of the first gate electrode layer; removing the offset sidewall film and a portion of the first gate dielectric film to form a first dielectric layer under the first gate electrode layer; forming sidewall spacers; forming source/drain doped regions on sides of the first gate electrode layer; forming a dielectric layer over the source/drain doped regions and the base substrate; and forming a gate opening in the dielectric layer by removing the first gate electrode layer and the first gate dielectric layer.

Semiconductor device and fabrication method thereof

A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, an active region on the substrate, an electrode in the active region, and an interlayer dielectric layer covering the active region and the electrode. The method also includes etching the interlayer dielectric layer to form a contact hole exposing the electrode, forming a conductive adhesion layer on a bottom and sidewalls of the contact hole, and forming a contact member on the conductive adhesion layer filling the contact hole. The conductive adhesion layer at the bottom and sidewalls of the contact hole prevents the electrode from being oxidized while forming the contact member, thereby effectively reducing the contact resistance and the barrier height of the semiconductor device.

Contact structure and method of forming the same

The present invention disclosed a method for improving the adsorption capacity of a fixed bed and its application in organic waste gas treatment field. The steps are: (1) adsorption: organic waste gas is passed through the adsorption column containing the adsorbent to allow the organic waste to be adsorbed; when VOCs concentration at the outlet end of the adsorption column reached a preset value, the adsorption is halted; (2) desorption: adsorbent that has absorbed VOCs was desorbed by water vapor of 110&#xb0; C. or higher, or hot nitrogen of 150&#xb0; C. or higher; the desorbed VOCs enter into a condenser and is recovered in liquid state; (3) pre-adsorption of water: spray water inside the adsorption column after the desorption to adjust the water content of the adsorbent to 8-35%, no other treatment is necessary before the next batch of VOCs adsorption.

Method for improving adsorption capability of fixed bed and application method thereof in organic waste gas treatment

Electronic scale

A vehicle is described, and includes a telematics device, a GPS tracking device, and a multi-position driver's seat including a seat position actuator that is operatively connected to a seat controller and disposed to control a position setting thereof. A control system and method for the vehicle is described and includes receiving an alert of an impending traffic event, and determining a desired activation command for the seat position actuator based upon the impending traffic event. The seat controller controls the seat position actuator responsive to the desired activation command.

Method and apparatus for controlling a vehicle seat

Growing community of inventors

Nanjing, China

Jian Yuan Wu