Phison Electronics Corporation

Jian-Yo Su

Chih-Kang Yeh

Chien-Hua Chu

Jui-Hsien Chang

Jiunn-Yeong Yang

A data writing method for a flash memory is provided. The data writing method includes: dividing a new data into at lease one sub-data by the size of a writing unit; selecting one of a plurality of spare blocks from the flash memory as a substitute block for substituting a data block, wherein the new data is to be written into the data block; sequentially writing the sub-data having the size of the writing unit into the substitute block in the writing unit; and storing the sub-data not having the size of the writing unit into a temporary area. The writing efficiency of the flash memory can be improved by temporarily storing the sub-data not having the size of the writing unit into the temporary area and then writing the sub-data not having the size of the writing unit with subsequent data into the substitute block.

Data writing method for flash memory and controller using the same

A data writing method for a flash memory is provided. The data writing method includes following steps. First, a block is selected as a substitute block from a spare area of the flash memory, wherein the substitute block is used for substituting a data block in a data area for writing a new data. Next, the new data is directly written into the substitute block starting from a start page, wherein there is valid data in the data block before the address for writing the new data. Thereby, meaningless data moving can be reduced, system performance can be improved, and overlong waiting time for writing the new data can be prevented.

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Taipei County, Taiwan

Jian-Yo Su