Az Electronic Materials (luxembourg) S.a.r.l.

Az Electronic Materials USA Corp.

Merck Patent Gmbh

Z Electronic Materials USA Corp.

Jian Yin

Hengpeng Wu

Guanyang Lin

Mark O Neisser

Ralph R Dammel

Ping-Hung Lu

Yi Cao

SungEun Hong

Margareta Paunescu

Jianhui Shan

JiHoon Kim

Huirong Yao

Muthiah Thiyagarajan

Weihong Liu

Zhong Xiang

David J Abdallah

Takanori Kudo

Medhat A Toukhy

PingHung Lu

Durairaj Baskaran

Hong Zhuang

Orest Polishchuk

Meng Li

Hung-Yang Chen

DongKwan Lee

Yi Yi

Jihoon Kim

Yihoon Kim

Sung-Eun Hong

The present invention relates to resist compositions comprising a polymer component, a photoacid generator component (PAG), a photoactive diazonaphthoquinone component (PAC), a base component, a solvent component, and optionally, a heterocyclic thiol component. The polymer component is a Novolak derivative, comprising Novolak repeat units with free phenolic hydroxy moieties, and Novolak repeat units comprising phenolic hydroxy moieties protected with an acid cleavable acetal moiety. The acetal moiety is elected from a mono functional alkyl acetal moiety protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, an acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety; a di-functional acetal comprising moiety, linking and protecting two repeat units comprising Novolak phenolic hydroxy moieties, forming a linking point in said polymer component between two different polymer chains in said polymer component, and a mixture of any of these three types of acid cleavable acetal moieties. The PAC component is selected from said acetal, comprising a moiety functionalized with a PAC moiety, protecting a repeat unit comprising a Novolak phenolic hydroxy moiety, a free PAC component, and a mixture of these two types of PAC components. The present invention also relates to the methods of using the present compositions in either in thick or thin film photoresist device manufacturing methodologies.

Novolak/DNQ based, chemically amplified photoresist

The present invention relates to a composition comprises at least one random copolymer having at least one repeat unit of structure (1), The present invention also relates to novel processes for forming patterns using this novel crosslinked layer on a substrate by enable a film of a block copolymer coated on the novel crosslinked layer to undergo self-assembly. 

Polymer compositions for self-assembly applications

The present invention relates to non aqueous, graftable coating composition comprised of a homogenous solution of a polymer and a spin casting organic solvent, where the composition does not contain acidic compounds, coloring particles, pigments or dyes, and the polymer has a linear polymer chain structure which is comprised of repeat units derived from monomers containing a single polymerizable olefinic carbon double bond, and the polymer contains at least one triarylmethyl chalcogenide containing moiety which is selected from the group consisting of repeat units having structure (I) an end chain group unit of structure (II) and mixtures thereof, and the polymer does not contain any repeat units or end groups containing water ionizable groups, ionic groups, free thiol groups, or free hydroxy groups, and where A, A, and Aare independently an Aryl or a substituted Aryl; Y is a chalcogen selected from O, S, Se or Te; Xand Xare individually selected organic spacers; Pis an organic polymer repeat unit moiety derived from a monomer containing a single polymerizable olefinic carbon double bound, and Pis an end group moiety derived from a monomer containing a single polymerizable olefinic carbon double bound, andrepresents a direct valence bond to the linear polymer.  The invention also relates to using this novel coating composition to form a grafted polymer film on a substrate.

Compositions and use thereof for modification of substrate surfaces

The present invention relates to novel copolymers containing cross-linkable and graft-able moieties, novel compositions comprised of these novel copolymers and a solvent, and methods for using these novel compositions to form neutral layer films which are both cross-linked and grafted on the substrate which are used in processes for aligning microdomains of block copolymers (BCP) on this neutral layer coated substrate such as self-assembly and directed self-assembly. The novel compositions are comprised of at least one novel random copolymer comprised of least one unit of structure (1), at least one unit of structure (2) at least one unit of structure (3) oneH end group and one end group having structure (1'); where Ris selected from the group consisting of a C-Calkyl, C-Cfluoroalkyl, C-Cpartially fluorinated alkyl moiety, C-Ccycloalkyl, C-Ccyclofluoroalkyl, C-Cpartially fluorinated cycloalkyl, and a C-Chydroxyalkyl; R, Rand Rare independently selected from a group consisting of H, C-Calkyl, CFand F; Ris selected from the group consisting of H, C-Calkyl, C-Cpartially fluorinated alkyl moiety and C-Cfluoroalkyl, n ranges from 1 to 5, Ris selected from the group consisting of H, F, C-Calkyl and a C-Cfluoroalkyl and m ranges from 1 to 3, and n&#x2032; ranges from 1 to 5, and n&#x2033; ranges from 1 to 5, n&#x2032;&#x2033; ranges from 1 to 5, Ris a Cto Calkyl and X is &#x2014;CN, or an alkyloxycarbonyl moiety R&#x2014;O&#x2014;(C&#x2550;O)&#x2014; where Ris a Cto Calkyl andrepresent the attachment point of the end group to the polymer. The novel polymers, compositions and processes are useful for fabrication of electronic devices.

Compositions and processes for self-assembly of block copolymers

The present invention relates to a novel diblock copolymer comprising a repeat unit (1) and a repeat unit (2), where Ris hydrogen or C-Calkyl, Ris selected from a group chosen from hydrogen, C-Calkyl, C-Calkoxy and halide, Ris selected from a group chosen from hydrogen, C-Calkyl and C-Cfluoroalkyl, and R, R, R, R, R, R, R, R, and Rare independently chosen from a C-Calkyl and n=1-6.  The invention also relates to a novel composition comprising the novel polymer and a solvent. The invention further relates to a process utilizing the novel composition for affecting directed self-assembly of the block copolymer.

Silicon containing block copolymers for direct self-assembly application

The present invention relates a novel aqueous composition comprising polymeric thermal acid generator and a process of coating the novel composition onto photoresist pattern, thereby forming a layer of the polymeric thermal acid generator over the photoresist pattern. The polymeric thermal acid generator comprises a polymer having at least one repeating unit of structure 2; where Rto Rare independently chosen from the group consisting of H and C-Calkyl; Ris chosen from the group consisting of unsubstituted aryl, substituted aryl, alkyl (C-C) and fluoroalkyl (C-C) and W is a C-Calkylene spacer.

Composition comprising a polymeric thermal acid generator and processes thereof

Disclosed herein is an underlayer composition, wherein the underlayer is typically used for promoting the formation of self assembled structures, and wherein the underlayer formulation comprises: (a) a polymer comprising at least one monomer repeat unit having the structure (I) wherein X is a crosslinking group chosen from and wherein n is 0-5, p is 0-5, q is 1-2, m is 1-2 and R is H, C-Calkyl or tri(C-Calkyl)silyl; (b) at least one thermal acid generator; and (c) a solvent. The invention further relates to methods of making and using the composition.

Underlayer composition for promoting self assembly and method of making and using

Disclosed herein is a formulation for depositing a cured underlayer for promoting the formation of self assembled structures. The underlayer comprises: (a) a polymer comprising at least one pendant vinyl ether monomer repeat unit having the structure, (I): wherein R is chosen from H, C-Calkyl, or halogen, and W is a divalent group chosen from C-Calkylene, C-Carylene, benzylene, or C-Calkyleneoxyalkylene; (ii) optional thermal acid generator; and (c) a solvent. The invention also relates to processes of forming a pattern using the underlayer.

The present invention relates to novel processes for using the neutral layer compositions for aligning microdomains of directed self-assembling block copolymers (BCP). The processes are useful for fabrication of electronic devices. The novel processes comprise a step of forming a coating of the neutral layer from the neutral layer composition, wherein the neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where Ris selected from the group consisting of a C-Calkyl, C-Cfluoroalkyl moiety, C-Cpartially fluorinated alkyl, C-Ccycloalkyl, C-Ccyclofluoroalkyl, C-Cpartially fluorinated cycloalkyl, and a C-Chydroxyalkyl; R, Rand Rare independently selected from a group consisting of H, C-Calkyl, CFand F; Ris selected from the group consisting of H, C-Calkyl, C-Cpartially fluorinated alkyl and C-Cfluoroalkyl, n ranges from 1 to 5, Ris selected from the group consisting of H, F, C-Calkyl and a C-Cfluoroalkyl and m ranges from 1 to 3.

Compositions of neutral layer for directed self assembly block copolymers and processes thereof

The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer.

Methods and materials for removing metals in block copolymers

The present invention relates to an aqueous composition for coating over a photoresist pattern comprising a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound comprising at least 1 carboxylic acid group. The invention further relates to processes for using the novel invention.

Composition for coating over a photoresist pattern

The present invention relates to a novel polymeric composition comprising a novel polymer having two or more repeat units and a terminus having the structure (1): wherein Rrepresents a C-Csubstituted or unsubstituted alkyl group, w is a number from 1-8, X is oxygen (O) or nitrogen (N), and Ris a reactive group. The invention also relates to a process for forming a pattern using the novel polymeric composition. The invention further relates to a process of making the novel polymer.

Neutral layer polymer composition for directed self assembly and processes thereof

The present invention relates to novel neutral layer compositions and methods for using the compositions. The neutral layer composition comprises at least one random copolymer having at least one unit of structure (1), at least one unit of structure (2) and at least one unit of structure (3) where Ris selected from the group consisting of a C-Calkyl, C-Cfluoroalkyl moiety, C-Cpartially fluorinated alkyl, C-Ccycloalkyl, C-Ccyclofluoroalkyl, C-Cpartially fluorinated cycloalkyl, and a C-Chydroxyalkyl; R, Rand Rare independently selected from a group consisting of H, C-Calkyl, CFand F; Ris selected from the group consisting of H, C-Calkyl, C-Cpartially fluorinated alkyl and C-Cfluoroalkyl, n ranges from 1 to 5, Ris selected from the group consisting of H, F, C-Calkyl and a C-Cfluoroalkyl and m ranges from 1 to 3.

The present invention relates to an antireflective coating composition comprising a novel polymer without an aromatic chromophore, where the polymer comprises a structural unit derived from an aminoplast and a structural unit derived from a diol, triol, dithiol, trithiol, other polyols, diacid, triacid, other polyacids, diimide or mixture thereof, where the diol, dithiol, triol, trithiol, diacid, triacid, diimide, diamide or imide-amide optionally contain one or more nitrogen and/or sulfur atoms or contain one or more alkene groups. The invention also relates to the novel polymer and a process for using the novel antireflective coating composition in a lithographic process.

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Bridgewater, NJ, United States of America

Jian Yin