National Yunlin University of Science and Technology

Huey-liang Hwang

Jian-Yang Lin

Huey-Liang Hwang

Cheng-Siang Hu

Chih-Kai Hu

Ting-Jia Chen

Pai-Yu Chang

Chao-Chang Li

Pei-Wei Hung

A solar cell with an anti-reflection structure comprises a solar cell substrate, a meshed electric-conduction layer formed on one surface of the solar cell substrate, a plurality of microspheres disposed on the meshed electric-conduction layer, and a dielectric layer. The microspheres have a diameter of 0.1-50 &#x3bc;m. The dielectric layer is formed between the meshed electric-conduction layer and the microspheres, and has a thickness smaller than the diameter of the microspheres to make the microspheres protrude from the dielectric layer. The meshed electric-conduction layer is formed via a screen-printing method. The present invention uses the microspheres and the meshed electric-conduction layer to achieve an excellent anti-reflection effect. Further, the present invention has the advantages of a simple fabrication process and a low fabrication cost.

Solar cell with anti-reflection structure and method for fabricating the same

A solar cell structure with a microsphere-roughened antireflection structure comprises a P-type metal contact electrode, a P-type semiconductor layer, a P-type monocrystalline substrate, an N-type semiconductor layer, an N-type metal contact electrode, and a microsphere-roughened antireflection layer. The N-type semiconductor layer and the P-type semiconductor layer are respectively arranged on an upper surface and a lower surface of the P-type monocrystalline substrate. The P-type metal contact electrode is arranged below the P-type semiconductor layer. The N-type metal contact electrode has a specified pattern and is connected with the N-type semiconductor layer. The microsphere-roughened antireflection layer is arranged on an upper surface of the N-type semiconductor layer without covering the N-type metal contact electrode. The microsphere-roughened antireflection layer reduces the reflection of sunlight and increases the transmittance of sunlight to enhance the efficiency of solar cells.

Solar cell structure and method for fabricating the same

A dye-sensitized solar cell with hybrid nanostructures comprises a negative-polarity conductive substrate, a metal oxide layer, a positive-polarity conductive substrate and an electrolyte. The metal oxide layer has a plurality of nanoparticles and a plurality of nanotubes. The metal oxide layer and the electrolyte are arranged between the negative-polarity conductive substrate and the positive-polarity conductive substrate. The nanoparticles increase contact area with dye and thus enhance power generation efficiency. The nanotubes increase carrier mobility and thus effectively transfer electricity to electrodes. The solar cell integrates the advantages of nanoparticles and nanotubes and offsets the disadvantages thereof to effectively enhance the photovoltaic conversion efficiency of dye-sensitized solar cells.

Dye-sensitized solar cell with hybrid nanostructures and method for fabricating working electrodes thereof

A method for manufacturing a junction plane of a solar cell through an aluminum induced crystallization method includes steps of: providing a substrate; forming an aluminum film layer on a surface of a first growth area on a back side of the substrate; forming an N-type amorphous silicon layer on a surface of the aluminum film layer and a surface of a second growth area on the back side of the substrate; performing a thermal treatment to allow aluminum to induce the N-type amorphous silicon layer to crystallize and form a P-type polycrystalline silicon layer, such that positions of the aluminum film layer and the P-type polycrystalline silicon layer are switched due to the thermal treatment to allow the P-type polycrystalline silicon layer to be formed between the aluminum film layer and the substrate to form a PN junction plane with the N-type amorphous silicon layer.

Method for manufacturing junction plane of solar cell through aluminum induced crystallization method

A method for fabricating a P-type polycrystalline silicon-germanium structure comprises steps: forming an aluminum layer and an amorphous germanium layer on a P-type monocrystalline silicon substrate in sequence; annealing the P-type monocrystalline silicon substrate, the aluminum layer and the amorphous germanium layer at a temperature of 400-650&#xb0; C.; and undertaking an aluminum-induced crystallization process in which germanium atoms of the amorphous germanium layer and silicon atoms of the P-type monocrystalline silicon substrate simultaneously pass through the aluminum layer and then the amorphous germanium layer being induced and converted into a P-type polycrystalline silicon-germanium layer between the P-type monocrystalline silicon substrate and the aluminum layer. The present invention is a simple, reliable and low-cost method to fabricate a P-type polycrystalline silicon-germanium layer on a P-type monocrystalline silicon substrate. In addition, the obtained P-type polycrystalline silicon-germanium layer can convert sunlight of longer wavelengths into electric energy.

Method for fabricating P-type polycrystalline silicon-germanium structure

A multilayer-doped OLED structure comprises a substrate, an anode layer, a hole transport layer, a multilayer-doped organic light emitting layer, an electron transport layer, an electron injection layer and a metallic cathode layer. The multilayer-doped organic light emitting layer functions as a lighting source. The multilayer-doped organic light emitting layer is fabricated by a plurality of film deposition and doping processes. Thereby, the multilayer-doped organic light emitting layer has better quantum effect to improve luminous efficiency and illumination of OLED.

Growing community of inventors

Douliu, Taiwan

Jian-Yang Lin