The Penn State Research Foundation

Jian Xu

Fan Zhang

Jie Liu

Jerzy Ruzyllo

Somasundaram Ashok

Ting Zhu

Zhenyu Jiang

Suzanne Mohney

Karthikeyan Shanmugasundaram

An integrated circuit is provided with a (bridge) rectifier circuit configured to couple to an alternating current (AC) supply to a (string of) LEDs monolithically fabricated on substrate, preferably on a patterned sapphire substrate (PSS). The rectifier including at least one schottky barrier diode configured to have a reverse-bias breakdown voltage substantially equal to or greater than half a peak voltage of the AC supply. Further embodiments include a method for fabricating an integrated Schottky barrier diode (SBD) with a LED on a LED wafer. Some embodiments can include etching processes to a wafer that may include a plurality of processing cycles. Some embodiments can further include a wafer having a patterned substrate. The wafer with the patterned substrate may have an interface layer configured to facilitate increasing a forward bias current density of the SBD.

Device comprising a light-emitting diode and a Schottky barrier diode rectifier, and method of fabrication

The present application relates generally to light emitting diodes and photodetectors as well as their methods of manufacture and use. In one exemplary embodiment, an integrated device may include a substrate, a light emitting diode formed on the substrate, and a photodetector formed on the substrate. In another embodiment, a device may include a light emitting diode formed on a substrate, and the light emitting diode may act as both a solid state light and as an optical transmitter.

Light emitting diodes and photodetectors

A quantum well-based p-i-n light emitting diode is provided that includes nanopillars with an average linear dimension of between 50 nanometers and 1 micron. The nanopillars include a laminar layer of quantum wells capable of non-radiative energy transfer to quantum dot nanocrystals. Quantum dot-Quantum well coupling through the side walls of the nanopillar-configured LED structure achieves a close proximity between quantum wells and quantum dots while retaining the overlying contact electrode structures. A white LED with attractive properties relative to conventional incandescent and fluorescence lighting devices is produced.

Application of semiconductor quantum dot phosphors in nanopillar light emitting diodes

A light emitting apparatus may include a gate metal positioned between a p-type contact and an n-type contact, a gate oxide or other dielectric stack positioned below and attached to the gate metal, a Ge or SiGechannel positioned below and attached to the gate dielectric stack, a buffer, and a silicon substrate positioned below and attached to the buffer. The light emitting apparatus may alternatively include a gate metal positioned between a p-type contact and an n-type contact, a wide bandgap semiconductor positioned below and attached to the gate metal, a Ge or SiGechannel positioned below and attached to the wide bandgap semiconductor, a buffer, and a silicon substrate positioned below and attached to the buffer. Embodiments of the light emitting apparatus may be configured for use in current-injected on-chip lasers, light emitting diodes or other light emitting devices.

Light emitting apparatus

An example quantum dot (QD) device comprises a QD layer on a substrate, and may be fabricated by aerosol deposition, for example by mist deposition. An example approach includes providing a liquid precursor including QDs dispersed in a liquid carrier, generating a mist of droplets of the liquid precursor, directing the droplets towards the substrate so as to form a liquid precursor film on the substrate, and removing the liquid carrier from the liquid precursor film to form the quantum dot layer on the substrate. Example devices include multi-color QD-LED (light emitting diode) displays, and other devices.

Growing community of inventors

State College, PA, United States of America

Jian Xu