United Microelectronics Corp.

Jian-Wei Chen

Shui-Yen Lu

Po-Wen Su

Chiu-Hsien Yeh

Hsiao-Pang Chou

Zhen Wu

Shih-Fang Tzou

Chen-Ming Huang

Yi-Wen Chen

Po-Cheng Huang

Chun-Tsen Lu

Chih-Jung Su

A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.

Method of forming semiconductor device

A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.

Semiconductor device and method of forming the same

A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.

Growing community of inventors

Kaohsiung, Taiwan

Jian-Wei Chen