Intel Corporation

Sabic Global Technolgoies B.v.

General Electric Company

Future Wei Technologies, Inc.

Huawei Technologies Co., Limited

Toray Industries, Inc.

Delta Electronics, Inc.

Via Technologies, Inc.

Integrated Device Technology, Inc.

Glaxo Group Limited

Stmicroelectronics International N.v.

Mstar Semiconductor, Inc.

Alpha & Omega Semiconductor Corporation

Ge Lighting Solutions LLC

Chinese Academy of Sciences

Jian Wang

Hui Wang

Zhaowei Jia

Yinuo Jin

Fuping Chen

Xi Wang

Jun Wang

Fufa Chen

Xiaoyan Zhang

Jian Ding

Yue Ma

Zehong Wan

Hong W Wong

Jun Sun

Liang Wang

Xiaoguo Liang

Vipulkumar Kantibhai Patel

Yang Hu

Jian Li

Shuhui Chen

Jun Wu

Wah Yiu Kwong

Alexander Uan-Zo-Li

Yong Zhao

Jiancheng Tao

Wenyuan Qian

Bin Liu

Xing Liu

Richard Stirling-Gallacher

Wei He

Zhengxiang Ma

Fei Li

Jian Zhou

Yunfeng Liu

Hualiang Jiang

Jie Li

Yan Chen

Hong Chen

Meng Zhang

Jiazhou Liu

Tao Li

Min Liu

Kaixian Chen

Rui Li

Xiaoming Yuan

Hong Xu

Yan Zhuang

Liangzhi Xie

Xuejun Li

Hongchao Yang

Shijie Song

Yunwen Huang

Hailong Ge

Xiaomin Zhang

Christopher E Neipp

Jie He

Eric Steven Manas

Zhixian Zhou

Joseph E Pero

Shena Jia

Wei Wen

Voha Nuch

Jun Zhu

Yaqin Zhang

Yunan Cheng

David Hui Wang

Eiichiro Tamaki

Yi Xie

Yingqi Zhang

Cunming Liang

Charles Adrian Becker

Wei Shan

Devon Worrell

Leonard Piazzi

Kan Zhang

Qin Wang

Saijun Mao

Yun Zheng

Cheng Peng

Jingya Li

Yasuo Kubota

Mingcheng Guo

Hui Xie

Tao He

Shu Qing Yang

Mingbo Su

Lile Liu

Zhiyong Yang

Xiaodong Chu

Yimin Hu

Qing Duan

Kai Long

Yu Yan

Yun Jin

Wenjun Wang

Cuijuan Zhou

Jianxue Ma

Disclosed is a substrate processing method, which comprises the following steps: S: transferring a substrate plated with a first metal layer from a first plating chamber to a second plating chamber; S: after transferring the substrate to the second plating chamber, forming a water film layer on the front side of the substrate; S: electroplating a second metal layer on the first metal layer. By means of a step of forming a water film layer before electroplating in a plating chamber, the present invention has advantages of preventing delamination between two metal layers and solving product recess abnormality.

Substrate processing method

Crystalline forms of an ATR inhibitor, preparation methods therefor, and the use thereof in the preparation of a drug for treating ATR-related diseases. In particular, crystalline forms of an ATR inhibitor represented by formula (I), physicochemical and biochemical properties of the same, preparation methods for, and uses of the same, in the preparation of a drug for treating ATR-related diseases.

Crystalline form of ATR inhibitor and use thereof

The present invention discloses a plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode; step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value Pand continue with a period T; step 3: when the period Tends, adjusting the first plating power supply applied on the first anode to output a power value Pand continue with a period T, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value Pand continue with a period T; and step 4: when the period Tends, adjusting the second plating power supply applied on the second anode to output a power value Pand continue with a period T; wherein step 2 to step 4 are performed periodically.

Plating apparatus and plating method

An electronic vehicle includes A DC link capacitor and a traction inverter coupled to the DC link capacitor. The traction inverter includes a first half bridge circuit, a second half bridge circuit, and a third half bridge circuit each coupled between terminals of the DC link capacitor. The traction inverter includes a driver circuit coupled to the traction inverter configured to drive the first, second, and third half bridge circuits to generate an AC voltage in a standard operating mode. The driver circuit is configured to discharge the DC link capacitor responsive to a discharge command by toggling the first half bridge between an open condition and a closed condition while holding the second half bridge circuit and the third half bridge circuit in the open condition.

Traction inverter DC-link active discharge method

Coil for substrate mounting

The provided are a four side seal packaging bag and a preparation device and method thereof. The preparation device includes at least: a film material conveying mechanism, configured to continuously convey a film material of a packaging bag along a length direction of the film material; a folding mechanism, configured to fold the film material conveyed by the film material conveying mechanism; a cutting mechanism, configured to cut the upper film material; punch-and-cut mechanisms, configured to form square punch-and-cut regions and separate the square punch-and-cut regions from the side accordion film materials; a side accordion forming mechanism, configured to perform a forming operation on the side accordion film materials; and a hot-sealing mechanism, configured to hot-seal the upper film material, the formed side accordion film materials, and the lower film material.

Four side seal packaging bag and preparation device and method thereof

Embodiments of this application provide a multi-device-based online interaction method, and relate to the field of terminals. A first electronic device starts a first application to play first playing content. When the first electronic device receives a control instruction for hopping the first playing content of the first application to a second electronic device, the first electronic device sends a hopping message to the second electronic device. When the second electronic device receives the hopping message, the second electronic device continues to play the first playing content. In response to a control starting instruction transmitted by a content provider server, the first electronic device starts an interaction control. The first electronic device obtains interaction information of the interaction control, and sends the interaction information to the content provider server.

Multi-device-based online interaction method, chip, electronic device, and storage medium

The present application provides techniques of generating augmented reality resources and corresponding trigger markers. The techniques comprise generating and storing at least one augmented reality resource corresponding to at least one predetermined object; determining that at least one target object comprised in an object order, wherein the at least one target object is among the at least one predetermined object; determining at least one storage address of at least one augmented reality resource corresponding to the at least one target object; and generating, based at least in part on the at least one storage address, a trigger marker corresponding to the object order, wherein the trigger marker is configured to indicate for a client computing device to present at least one augmented reality image of the at least one target object based on the trigger marker.

Marker generation method and apparatus, and object presentation method and apparatus

Thermoplastic compositions include: from about 30 wt % to about 80 wt % of a polymer base resin component; from about 3 wt % to about 20 wt % of a polycarbonate component; from about 2 wt % to about 15 wt % of an impact modifier component; from about 10 wt % to about 50 wt % of a glass fiber component; and from about 0.5 wt % to about 8 wt % of a carbon additive including carbon fiber. The compositions have a dielectric constant (Dk) of at least 5 at a frequency of from 1 GHz to 30 GHz as tested in accordance with a coaxial method.

Thermoplastic compositions with ultra-high dielectric constant for nano molding technology (NMT) applications

A method for cleaning substrates includes rotating a substrate; delivering deionized water on a surface of the substrate for pre wetting the surface of the substrate; delivering chemical solution with high temperature on the surface of the substrate for cleaning the surface of the substrate; changing the rotation speed of the substrate to a low rotation speed, and moving a ultra/mega sonic device. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a first cleaning cycle; turning off the ultra/mega sonic device, and delivering a high temperature chemical solution or deionized water. The method further includes turning on the ultra/mega sonic device and supplying a constant or pulse working power in a second cleaning cycle; turning off the ultra/mega sonic device, and delivering rinse chemical solution or deionized water on the surface of the substrate; and drying the substrate.

Method and apparatus for cleaning substrates using high temperature chemicals and ultrasonic device

A stator winding structure () for a motor. The motor is a three-phase alternating current motor having eight poles. Each phase comprises four shunt wound branches. The stator winding consists of multiple U-shaped flat copper wires (). A connection portion of each U-shaped flat copper wire () disposed in the motor is located on the same side with respect to the motor. The technical solution also provides a motor comprising the stator winding structure () and a vehicle comprising the motor.

Stator winding structure and motor comprising same

The invention provides an apparatus for cleaning semiconductor wafers. The apparatus includes at least one first tank, containing cleaning chemical, configured to implement batch cleaning process; one or more second tanks, containing cleaning liquid, configured to implement batch cleaning process; one or more single wafer cleaning modules, configured to implement single wafer cleaning and drying processes; a plurality of robots, configured to transfer one or more wafers to the at least one first tank and the one or more second tanks successively, and then to the one or more single wafer cleaning modules; and a controller, configured to control the plurality of robots to transfer the one or more wafers to the at least one first tank and the one or more second tanks successively, and then to the one or more single wafer cleaning modules.

Apparatus and method for cleaning semiconductor wafers

Disclosed are a winding structure for an electric motor and an electric motor. The electric motor comprises an iron core () and a multi-phase winding structure (), wherein the iron core () is provided with a plurality of grooves () arranged in the circumferential direction, and one side of the iron core () is an inserting side, and the other side is a welding side; the multi-phase winding structure () is arranged in the plurality of grooves () of the iron core (), each phase of the winding structure () comprises N parallel winding sub-windings formed by a plurality of hairpin conductors of different shapes, and N is a positive even number; and the conductors, forming each phase of the winding structure (), of the same sub-winding are located on a non-adjacent conductor layer corresponding to the grooves ().

Winding structure for electric motor and electric motor

The present invention relates to novel compounds that inhibit Lp-PLAactivity, processes for their preparation, to compositions containing them and to their use in the treatment of diseases associated with the activity of Lp-PLA, for example Alzheimer's disease.

Compounds

A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency fand power Pagain; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ, or comparing the detected power off time with a preset time τ, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ, or the detected power off time is shorter than the preset time τ, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

Methods and apparatus for cleaning semiconductor wafers

Growing community of inventors

Shanghai, China

Jian Wang