Xilinx, Inc.

Jian Tan

Atul V Ghia

Jason R Bergendahl

Qi Zhang

Suresh M Menon

Matthew H Klein

Paul T Sasaki

Ketan Sodha

David P Schultz

Hassan K Bazargan

Eunice Y D Hao

Paul Y Wu

Romi Mayder

Christopher Paul Wyland

Prasad Rau

Wenfeng Zhang

Guo Jun Ren

Madan Mohan Patra

Eunice U D Hao

David P c/o Xilinx Inc Schultz

Jason R c/o Xilinx Inc Bergendahl

In one embodiment, an integrated circuit (IC) is presented. The IC includes first and second sets of power distribution lines formed in the IC. The IC includes first and second capacitors formed in one or more layers of the IC. A first plurality of vias couple a first input of the first and second capacitors to the first set of power distribution lines, and a second plurality of vias couple a second input of the first and second capacitors to the second set of power distribution lines. The first capacitor and the first plurality of vias and the second plurality of vias coupled thereto having an equivalent series resistance greater than an equivalent series resistance of the second capacitor and the first plurality of vias and the second plurality of vias coupled thereto.

Power distribution network

A method and apparatus to reduce the degradation in performance of semiconductor-based devices due to process, voltage, and temperature (PVT) and/or other causes of variation. Adaptive feedback mechanisms are employed to sense and correct performance degradation, while simultaneously facilitating configurability within integrated circuits (ICs) such as programmable logic devices (PLDs). A voltage-feedback mechanism is employed to detect PVT variation and mirrored current references are adaptively adjusted to track and substantially eliminate the PVT variation. More than one voltage-feedback mechanism may instead be utilized to detect PVT-based variations within a differential device, whereby a first voltage-feedback mechanism is utilized to detect common-mode voltage variation and a second voltage-feedback mechanism produces mirrored reference currents to substantially remove the common-mode voltage variation and facilitate symmetrical operation of the differential device.

Method and apparatus for a process, voltage, and temperature variation tolerant semiconductor device

A circuit has a programmable mode control section, and a receiver section with first and second input terminals and an output terminal. The method and apparatus involve setting the mode control section to one of first and second states in response to user input, and operating the receiver section in first and second operational mode when the mode control section respectively has the first and second states, wherein in the first operational mode the receiver section provides higher performance and consumes more power than in the second operational mode.

Method and apparatus involving a receiver with a selectable performance characteristic

An embodiment of a method for operation of an input/output block is disclosed. For this embodiment of the method, a first attribute is set for a first disable signal for an input driver. A first tri-state condition is removed from an output driver. In response to the removing of the first tri-state condition, the input driver is placed in a second tri-state condition.

Input/output block and operation thereof

A system for signal level shifting in an IC can include a first inverter having a first pull-up device and a pull-down device, wherein the first inverter is operable to receive an input signal having a voltage potential at a logic high that does not disable the first pull-up device. The system can include a second inverter coupled in series to an output of the first inverter, and a control module coupled to the output of the first inverter and an output of the second inverter. Prior to the input signal transitioning to the logic high, the control module is operable to decouple the input signal from the first pull-up device, disable the first pull-up device, and close a feedback loop that latches an output state of the second inverter.

High speed, low power signal level shifter

An input/output (I/O) structure includes a delay element usable for the input path, the output path, or both input and output paths in a user design. In a first mode, the delay element is included in the input path. In a second mode, the delay element is included in the output path. In a third mode, the I/O structure includes the delay in both outgoing signal paths and incoming signal paths, e.g., by utilizing an output tristate signal to control the direction of the delay line. When the output buffer is driving, the delay is inserted in the output path. When the output buffer is tristated, the delay is inserted in the input path. Thus, a single delay element is dynamically shared by both input and output signals that use the same I/O pad. In an optional fourth mode, the delay element is bypassed by both input and output signals.

Reversible input/output delay line for bidirectional input/output blocks

A high-speed, area-efficient level shifter includes transistors having a variety of oxide thicknesses. The level shifter has a protection circuit stage, and a current mirror stage that allows the level shifter to perform over a wide voltage range at a high frequency. The level shifter maintains rise time, fall time, and duty cycle over a wide range of input and output voltage levels.

Voltage level shifter

A serializer-deserializer instantiated in configurable logic of an integrated circuit is described. The serializer-deserializer includes an input deserializer and an output serializer, which may be commonly coupled via an input/output pad. Each of the serializer and deserializer may be configured for an operating mode selected from a Single Data Rate mode and a Double Data Rate mode. The serializer-deserializer may be used as part of a synchronous interface.

Multi-purpose source synchronous interface circuitry

Method and apparatus for a bimodal serial to parallel converter is provided. A first stage of registers is clocked responsive to a clock signal, such as a forwarded clock signal of a synchronous interface. The first stage of registers is configurable in either a single serial shift chain or two serial shift chains. The former configuration is for Single Data Rate ('SDR') data, and the latter configuration is for Double Data Rate ('DDR') data. A bitslip controller is configured to provide a control select signal to selection circuitry. For DDR operation, the control signal is for selecting respective portions of outputs from the two serial shift chains for providing to a second stage of registers. For DDR operation, the second stage of registers is alternatively clocked responsive to a divided down version of the clock signal and another divided down version of the clock signal which is periodically stopped.

Bimodal serial to parallel converter with bitslip controller

A hot swap protection circuit ( ) for an integrated circuit being plugged into a powered-up system includes a first circuit ( ) for detecting a hot swap condition, a second circuit ( ) coupled to the first circuit for preventing a pn junction diode ( ) in a pull-up transistor ( ) from going into a forward bias condition, and a third circuit ( ) coupled to the first and second circuits for preventing the pull-up transistor from turning on during the hot swap condition.

Method and circuit for hot swap protection

A system for controlling the impedances of circuits on an integrated circuit chip is provided. At least one circuit is selected to operate as a p-channel reference circuit, and at least one circuit is selected to operate as an n-channel reference circuit. Other circuits are selected to operate as circuits and/or line termination circuits. A digitally controlled impedance (DCI) circuit controls the p-channel reference circuit to determine a desired configuration of p-channel transistors for use in the circuits. The DCI circuit further controls the n-channel reference circuit to determine a desired configuration of n-channel transistors for use in the circuits. The DCI circuit takes into account such factors as resistances of p-channel transistors in the p-channel reference circuit, resistances of n-channel transistors in the n-channel reference circuit, as well as temperature, voltage and process variations. The DCI circuit relays information identifying the desired configurations of the n-channel and p-channel transistors to the circuits. The circuits are then configured in response to this information.

Growing community of inventors

Fremont, CA, United States of America

Jian Tan