Other

Advanced Optoelectronic Technology, Inc.

National Science Council

Jian-Shihn Tsang

Jan-Dar Guo

Shih-Hsiung Chan

Wei-Chi Lai

Simon M Sze

Lung-Hsin Chen

Chun-Yen Chang

Wen-Liang Tseng

Chih-Yung Lin

Tzu-Chien Hung

Chia-Hui Shen

Min-Tsun Hsieh

Ching-Lien Yeh

Irene Chen

Chi-Wei Liao

Yu-Shan Wu

Shih-Hciung Chan

In a light emitting device package and manufacturing method thereof, a multi-layer structure is allocated upon a substrate, of which at least two films with different refractive indices are alternately stacked together.

Light emitting diode package and manufacturing method thereof

A light module of an LCD backlight module includes a circuit board and a plurality of light-emitting diodes (LEDs) arranged on the circuit board. Each of the LEDs has a wide far-field pattern and is without a reflector, and each of the LEDs includes at least one LED chip and a molding unit packaging the LED chip. The LED chip is electrically connected to the circuit board and is also suitable for backlighting use. When a light-emitting angle of each of the LEDs is at 120 degrees, a light intensity thereof is still more than 50% of the intensity at frontage.

Light module for LCD backlight module

An LED package structure includes a transparent substrate having a supporting face and a light-emergent face opposite to the supporting face, a housing disposed on the supporting face, two electrodes disposed on the housing, an LED chip disposed on the supporting face and electrically connected to the two electrodes, a reflecting layer covering the LED chip to reflect light emitted by the LED chip toward the transparent substrate, and a phosphor layer formed on the light-emergent face of the substrate. The phosphor layer includes a plurality of layers each having a specific light wavelength conversion range to generate a light with a predetermined color.

LED package structure

The present invention pertains to a light emitting diode with high luminance and method therefor, and specially to a light emitting diode having a selectively highly-doped low resistive layer of InGaAlP. The selectively highly-doped low resistive layer may be grown by the current epitaxy technique. Therefore, the light emitting diode of the present application may be mass produced, thus having industrial applicability.

Light emitting diode with high luminance and method therefor

The present invention relates to a light emitting diode with high luminance and method for making the same, and more particularly to a light emitting diode having a transparent window layer which is formed by a semiconductor film of nitrogen-containing compounds. The present invention is mainly directed to growing a window layer of a light emitting diode with a nitrogen-containing compound on the double heterostructure of InGaAlP. Since the energy gap of the nitrogen-containing compound is greater than that of the light emitted from the active layer and is smaller than that of GaP, it is easily to be doped and to form metallic ohmic electrode. Therefore, it is suitable to form a window layer, thereby increasing the light emitting efficiency of a light emitting diode. In addition, the nitrogen-containing compounds can be formed by the current MBE or OMVPE techniques. Therefore, the light emitting diode can be mass-produced and does have industrial applicability.

Light emitting diode with high luminance and method for making the same

An epitaxial system is provided for performing an epitaxial growth of IIIA-VA compound on the wafer substrate. The epitaxial system includes a first reaction region for providing a plasma of a first reactant, a second reaction region for epitaxially reacting the plasma of the first reactant with a second reactant on a wafer, and a guiding medium disposed between the first reaction region and the second reaction region for passing therethrough the second reactant and the first reactant plasma to the second reaction region.

Epitaxial system

A new method for manufacturing a Group III metal nitride epitaxial wafer comprises providing a first nitrogen-contained gas source, providing a second Group III metal trichloride--containing gas source, and causing said first gas to react with second gas in a heating region, thereby forming a Group III metal nitride epitaxial layer on a substrate. The formed epitaxial wafer can serve as a substrate of a laser diode.

Growing community of inventors

Hsinchu, Taiwan

Jian-Shihn Tsang