Shenzhen Goodix Technology Co., Ltd.

Huawei Technologies Co., Limited

Shenzhen Weitongbo Technology Co., Ltd.

Mophie Inc.

Zte Corporation

Shenzhen Immotor Technology Co., Ltd.

Jian Shen

Jian Ding

Bin Lu

Guofeng Yao

Weihong Xiao

Nguyen To

Soo Youn Park

Wenxuan Wang

Sai Kong Frank Lee

Lixin Jiang

Charles Seung Kim

Hongchao Wang

Yunning Li

Changeun Kim

Bo Song Chen

Yun Feng

Wei Zheng

Jianjun Chen

Tao Zhou

Wei Long

Dat Minh Dang

Baoquan Wu

Ming Chiao Chiang

Honggang Xu

Feng Zhu

Fangqing Duan

Fengxin Wang

Lei Yuan

Chee-Wui Loke

Yanmin Yu

Zhengyuan Hu

Brian Kim

Xuewen Zhao

Hongguo Zhou

Pingjing Wang

Hanling Yang

Fei Ju

Xufeng Jiang

Jiaxi Huang

Kari Piispanen

Nanxue Gong

Xiaorui Wang

A method includes a computer device that determines a first sensing central point of a second sensing area and a second sensing central point of a third sensing area based on sensing data on a hovering control panel at a reference moment, determines an area segmentation line of a first sensing area based on the first sensing central point and the second sensing central point, and segments, based on the area segmentation line, the first sensing area generated at a first moment to obtain a first sensing control area and a second sensing control area such that, a case in which sensing areas generated by two objects are combined or a weaker sensing area is covered when the two objects are in proximity or overlap can be effectively avoided.

Method and apparatus for separating sensing area during hovering control, and hovering control remote controller

A touch detection drive circuit in an electronic device inputs a touch excitation signal to a touch electrode, and receives a detection signal of the touch electrode. An isolation power supply circuit: receives the touch excitation signal and a primary power supply voltage; based on the touch excitation signal in a non-touch detection phase, short-circuits a first reference ground and a second reference ground, stores the primary power supply voltage, and transmits the primary power supply voltage to the touch detection drive circuit; and in a touch detection phase, disconnects the first reference ground from the second reference ground and discharges to the touch detection drive circuit.

Electronic device and control method thereof, touch control system, and chip system

A capacitor includes: a semiconductor substrate; at least one trench provided in the semiconductor substrate and formed downward from an upper surface of the semiconductor substrate; a first conductive layer provided above the semiconductor substrate and in the trench; a first insulating layer provided between the substrate and the first conductive layer to isolate the first conductive layer from the substrate; a second conductive layer provided above the r substrate and in the trench, the second conductive layer including a first and a second conductive region that are independent from each other, the first conductive region being electrically connected to the substrate, and the second conductive region being electrically connected to the first conductive layer; and a second insulating layer provided between the first and the second conductive layer to isolate the first conductive region from the first conductive layer and isolate the second conductive region from the substrate.

Capacitor and manufacturing method therefor

The present disclosure provides a 1T1R resistive random access memory and a manufacturing method thereof, and a device. The 1T1R resistive random access memory includes: a memory cell array composed of multiple 1T1R resistive random access memory cells, each 1T1R resistive random access memory cell including a transistor and a resistance switching device (). The transistor includes a channel layer (), a gate layer () insulated from the channel layer (), and a drain layer () and a source layer () disposed on the channel layer (), and the drain layer () and the source layer () are vertically distributed on the channel layer (). The resistance change device () is disposed near the drain layer (). The disclosure reduces the area of a transistor, thereby significantly improving the memory density of the resistive random access memory.

1T1R resistive random access memory, and manufacturing method thereof, transistor and device

A capacitor includes: a substrate; a first trench entering the substrate downward from the upper surface of the substrate; a laminated structure provided in the first trench and including m dielectric layers and n conductive layers, the m dielectric layers and the n conductive layers forming a structure that a conductive layer and a dielectric layer are adjacent to each other, each dielectric layer of the m dielectric layers including at least one high-k insulating material with a relative dielectric constant k greater than a first threshold value, and each conductive layer of the n conductive layers including at least one high work function conductive material with a work function greater than a second threshold value, where m and n are positive integers; and a first electrode electrically connected to all odd-numbered conductive layers, and a second electrode electrically connected to all even-numbered conductive layers.

Provided are an optical image capturing unit and an electronic device. The optical image capturing unit includes: an optical converging device; a diaphragm disposed on a back focal plane of the optical converging device, where the diaphragm is provided with a window; and a photosensing unit disposed under the diaphragm, where the optical converging device is configured to converge an optical signal within a specific incident angle range to the window, and the optical signal is transmitted to the photosensing unit via the window.

Biometric identification device using a light detection apparatus with light blocking layer/diaphragm

A capacitor includes at least one multi-wing structure; a laminated structure, where the laminated structure clads the at least one multi-wing structure and includes at least one dielectric layer and a plurality of conductive layers, and the at least one dielectric layer and the plurality of conductive layers form a structure that a conductive layer and a dielectric layer are adjacent to each other; at least one first external electrode, where the first external electrode is electrically connected to some conductive layer(s) in the plurality of conductive layers; at least one second external electrode, wherein the second external electrode is electrically connected to the other conductive layer(s) in the plurality of conductive layers, and a conductive layer in the laminated structure adjacent to each conductive layer in the some conductive layer(s) includes at least one conductive layer in the other conductive layer(s).

Capacitor and method for producing the same

A capacitor includes: at least one multi-wing structure including N axes and M wings, where the N axes extend along a first direction, and the M wings are a convex structure formed by extending from side walls of the N axes toward a direction perpendicular to the first direction, a first wing of the M wings and the N axes are formed of a first conductive material, and other wings are formed of a second conductive material; a conductive structure cladding the multi-wing structure; a dielectric layer disposed between the multi-wing structure and the conductive structure to isolate the multi-wing structure from the conductive structure; a first external electrode electrically connected to some or all multi-wing structures; and a second external electrode electrically connected to the conductive structure.

A security chip includes: a first medium layer; a second medium layer disposed on the first medium layer, where the first medium layer is an optically denser medium relative to the second medium layer, and a roughness of an upper surface of the first medium layer is greater than or equal to a preset threshold, so that light entering the second medium layer from the first medium layer is able to be totally reflected and/or scattered; and a semiconductor chip disposed on the second medium layer. Based on the above technical solution, light incident from a lower surface of the first medium layer is able to be totally reflected or scattered by the upper surface of the first medium layer, so that most of light cannot reach a logic or storage area on the front of the security chip, thereby achieving the purpose of resisting a laser attack.

Security chip, security chip production method and electronic device

A capacitor includes: a semiconductor substrate including at least one substrate trench group; at least one laminated structure, each laminated structure includes n conductive layers and m dielectric layers, the first conductive layer in the n conductive layers is disposed above the semiconductor substrate and in the substrate trench group, the i-th conductive layer in the n conductive layers is provided with the i-th conductive layer trench group, and the (i+1)th conductive layer in the n conductive layers is disposed above the i-th conductive layer and in the i-th conductive layer trench group, where m, n, and i are positive integers, and n&#x2265;2, 1&#x2264;i&#x2264;n&#x2212;1; a first external electrode connected to some conductive layers; and a second external electrode connected to other conductive layers.

Present disclosure provide a capacitor includes: a semiconductor substrate; a laminated structure including n conductive layers and m dielectric layer(s), the i-th conductive layer being provided with at least one i-th isolation trench, the (i+1)-th conductive layer being provided above the i-th conductive layer and in the i-th isolation trench, isolation trenches in odd-numbered and even-numbered conductive layers having a first and a second overlap region in a vertical direction respectively, and the first overlap region not overlapping the second overlap region, where m, n, and i are positive integers, n&#x2265;2, and 1&#x2264;i&#x2264;n&#x2212;1; at least one first external electrode electrically connected to all odd-numbered conductive layer(s) through a first conductive via structure in the second overlap region; and at least one second external electrode electrically connected to all even-numbered conductive layer(s) through a second conductive via structure in the first overlap region.

The present disclosure provides an image sensor including a substrate () and at least one pixel unit. The pixel unit comprises a photodetector () arranged in the substrate, a photosensitive surface of the photodetector facing a back surface of the substrate to generate a charge upon receiving an incident light from the back surface of the substrate, a spherical crown structure () arranged on the substrate and located on an opposite surface of the photosensitive surface, a conformal dielectric layer () arranged on the spherical crown structure and used to generate a dielectric-layer reflective light when the incident light reaches the conformal dielectric layer, and a reflective layer () arranged on the conformal dielectric layer and used to generate a reflective-layer reflective light when the incident light reaches the reflective layer. In this way, an absorption ratio for the incident light is increased, thereby improving signal quality of an image.

Image sensor and method for manufacturing the same

A capacitor includes: a semiconductor substrate; a first insulating layer disposed under the substrate; a first trench group disposed in the substrate and the first insulating layer, the first trench group includes two first trenches which penetrate through the substrate downward from an upper surface of the substrate and enter the first insulating layer, and bottoms of the two first trenches are communicated to form a first cavity structure located in the first insulating layer; a laminated structure disposed above the substrate, in the first trench group, and in the first cavity structure, the laminated structure includes m insulating layers and n conductive layers forming a structure that each insulating layer electrically isolates each conductive layer from each other; a first electrode layer electrically connected to all odd-numbered conductive layers; and a second electrode layer electrically connected to all even-numbered conductive layers.

Capacitor and method for fabricating the same

Embodiments of the present application disclose a capacitor and a method for producing a capacitor. The capacitor includes: an electrode layer including a first electrode and a second electrode separated from each other; a laminated structure including n dielectric layer(s) and n+1 conductive layers, where the n dielectric layer(s) and the n+1 conductive layers form a structure that a conductive layer and a dielectric layer are adjacent to each other, and the laminated structure forms at least two columnar structures, and n is a positive integer; and an interconnection structure configured to electrically connect an odd-numbered conductive layer in the n+1 conductive layers to the first electrode and electrically connect an even-numbered conductive layer in the n+1 conductive layers to the second electrode. According to the technical solution of the embodiments of the present application, capacitance density of the capacitor could be improved.

Capacitor and method for producing capacitor

Embodiments of the present application provide a memristor electrode material preparation method and apparatus, and a memristor electrode material. The preparation method includes: depositing a metal nitride on a substrate by a reactive sputtering process to obtain a metal nitride substrate; and subjecting the metal nitride substrate to laser annealing treatment in a nitrogen-containing atmosphere to nitride an unreacted metal on the metal nitride substrate, so as to obtain a memristor electrode material.

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Shenzhen, China

Jian Shen