National Chung Shan Institute of Science and Technology

Jian-Long Ruan

Yang-Kuo Kuo

Shyh-Jer Huang

Yang-Kuao Kuo

Yi-Hsiuan Yu

Chung-Yen Lu

Chia-Ting Lin

Yung-Han Huang

Hsin-Chieh Yu

A method of evaluating microwave characteristics includes the steps of: (A) measuring thermal diffusion features and microwave characteristics of at least three mode samples to obtain at least three data points, wherein the mode samples include identical constituents but at different ratios thereof; (B) obtaining a mathematical relation between the data points by linear regression; (C) measuring a thermal diffusion feature of a sample under test, wherein the sample under test and the mode samples include identical constituents; and (D) substituting the thermal diffusion feature of the sample under test into the mathematical relation to evaluate a microwave characteristic of the sample under test. The method is applicable to a ceramic material to evaluate microwave characteristics of the ceramic material.

Method of evaluating microwave characteristic

The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.

Directly flat-attached switching component for active frequency selective surface and fabricating method thereof

The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.

Method for preparing aluminum nitride-zinc oxide ultraviolet detecting electrode

A method of producing a secondary lens with hollow nano structures comprises the following steps (a) forming a polycrystalline seed layer on the surface of a lens; (b) growing a plurality of nano-rod structures over the polycrystalline seed layer in a random arrangement; (c) removing the portion of the seed layer where the nano-rod structure does not grow so that the surface of the lens therebeneath is exposed to outside; (d) sputtering a ceramic material layer over the plurality of nano-rod structures and the exposed surface portion of the lens; (e) removing the plurality of nano-rod structures and leaving a ceramic material layer having a plurality of hollow nano-rod structures in a random arrangement. A layer with hollow nano structures is formed on the surface of a lens wherein the hollow nano structures have the effect of scattering light and can improve the uniform illuminance of a secondary lens.

Method of producing secondary lens with hollow nano structures for uniform illuminance

A method of manufacturing an epitaxiable heat-dissipating substrate comprises the steps of (A) forming a roughened surface on a substrate made of a polycrystalline or amorphous material with a high thermal conductivity coefficient; (B) forming a flat layer on the roughened surface; and (C) forming a buffer layer on the flat layer. The flat layer reduces the surface roughness of the substrate, and then the buffer layer functions as a base for epitaxial growth, thereby being directly applicable to production of semiconductor devices which are flat and capable of isotropic epitaxial growth.

Method of manufacturing epitaxiable heat-dissipating substrate

Disclosed is an aluminum nitride electrostatic chuck, comprising: a positioning electrostatic chuck and a carrier structure. The positioning electrostatic chuck includes a groove structure layer, a dielectric insulation layer, and a heat conduction layer. In the groove structure layer on the surface of the electrostatic chuck is provided with cooling gas channels, to facilitate control of the temperature distribution of a wafer. The electrostatic chuck is especially designed for use in a semiconductor manufacturing process of high temperature and high plasma power density. The dielectric insulation layer is provided with embedded electrodes, such that voltage conversion can be carried out to effect wafer absorption/release. The cooling gas channels are used to control temperature of the absorbed wafer, by means of heat conduction of aluminum nitride electrostatic chuck. Therefore, wafer temperature distribution is controlled through aspect ratio and geometry of cooling gas channel.

Growing community of inventors

Taoyuan, Taiwan

Jian-Long Ruan