William Marsh Rice University

Nanyang Technological University

Jian Lin

James Mitchell Tour

Zhiwei Peng

Carter Kittrell

Changsheng Xiang

Jun Yao

Ruquan Ye

Zheng Yan

Gabriel Ceriotti

Krishna Palem

Gunuk Wang

Wilbur Carter Kittrell

Yu Zhu

Lei Li

In some embodiments, the present disclosure pertains to methods of producing a graphene material by exposing a polymer to a laser source. In some embodiments, the exposing results in formation of a graphene from the polymer. In some embodiments, the methods of the present disclosure also include a step of separating the formed graphene from the polymer to form an isolated graphene. In some embodiments, the methods of the present disclosure also include a step of incorporating the graphene material or the isolated graphene into an electronic device, such as an energy storage device. In some embodiments, the graphene is utilized as at least one of an electrode, current collector or additive in the electronic device. Additional embodiments of the present disclosure pertain to the graphene materials, isolated graphenes, and electronic devices that are formed by the methods of the present disclosure.

Laser induced graphene materials and their use in electronic devices

In some embodiments, the present disclosure pertains to methods of making graphene quantum dots from a carbon source (e.g., coal, coke, and combinations thereof) by exposing the carbon source to an oxidant. In some embodiments, the methods of the present disclosure further comprise a step of separating the formed graphene quantum dots from the oxidant. In some embodiments, the methods of the present disclosure further comprise a step of reducing the formed graphene quantum dots. In some embodiments, the methods of the present disclosure further comprise a step of enhancing a quantum yield of the graphene quantum dots. In further embodiments, the methods of the present disclosure also include a step of controlling the diameter of the formed graphene quantum dots by selecting the carbon source. In some embodiments, the formed graphene quantum dots comprise oxygen addends or amorphous carbon addends on their edges.

Methods of producing graphene quantum dots from coal and coke

Provided are methods of making graphene-carbon nanotube hybrid materials. Such methods generally include: (1) associating a graphene film with a substrate; (2) applying a catalyst and a carbon source to the graphene film; and (3) growing carbon nanotubes on the graphene film. The grown carbon nanotubes become covalently linked to the graphene film through carbon-carbon bonds that are located at one or more junctions between the carbon nanotubes and the graphene film. In addition, the grown carbon nanotubes are in ohmic contact with the graphene film through the carbon-carbon bonds at the one or more junctions. The one or more junctions may include seven-membered carbon rings. Also provided are the formed graphene-carbon nanotube hybrid materials.

Graphene-carbon nanotube hybrid materials and use as electrodes

Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiO, SiOH, SiON, SiONH, SiOC, SiOCH, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 and equal to or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.

Addressable SiOX memory array with incorporated diodes

Growing community of inventors

Houston, TX, United States of America

Jian Lin