At&t Intellectual Property I, LP

Applied Materials, Inc.

Intel Corporation

Future Wei Technologies, Inc.

Qspeed Semiconductor Inc.

Intermolecular, Inc.

Power Integrations, Inc.

Cisco Technology, Inc.

Intpax, Inc.

Jian Li

Zhi Li

Xiao-Chun Mu

Juan Carlos Rocha-Alvarez

Raghvendra Savoor

Sun-Uk Park

Dmitry A Dzilno

Quat T Vu

Qing Ma

Ho-Yuan Yu

Paul Brillhart

Zheng John Ye

Chun Mu

Rui Cheng

Kwangduk Douglas Lee

Prashant Kumar Kulshreshtha

Vinay K Prabhakar

Zubin Huang

Sarah Michelle Bobek

Venkata Sharat Chandra Parimi

Sairaju Tallavarjula

Kailash Pradhan

Chidambara A Ramalingam

Huy Q Nguyen

Daniel Chang

Katherine Woo

Wei Liu

Nitin Kumar

Son Truong Nguyen

Paul Winer

Canhui Ou

Larry E Mosley

Jin Hyung Lee

Johanes F Swenberg

Steven N Towle

Edward P Hammond

Nikhil D Kalyankar

Malcolm J Bevan

Sridhar Balakrishnan

Sungwon Ha

Steven Gemelos

Jose Antonio Marin

Mark Isenberger

Jim Zhao

Han Su

Wenzhe Zhou

Shinnosuke Kawaguchi

Craig Hunter

Howard Scott Mountford

Orlando Echeverria-Calvet

Tony P Chiang

Jun Ma

Deenesh Padhi

Karthik Janakiraman

Baofeng Jiang

David Walter Groechel

Liji Huang

Guizhen Zhang

Xinhai Han

Abdul Aziz Khaja

Arvind Ramdas Mallya

Robert Duncan Doverspike

Guangzhi Li

Diwakar N Kedlaya

Umesh M Kelkar

Kapil Vishwas Shrikhande

Richard Francis

Dongmei Wang

Mayur G Kulkarni

Sanjay G Kamath

Juan Carlos Rocha

Chuanbin Pan

Satish Radhakrishnan

Daemian Raj Benjamin Raj

Harry H Fujimoto

Minh Anh Nguyen

Shailendra Srivastava

John Gregory Klincewicz

Moshe Segal

Sumit Agarwal

Paul E Fisher

Viren Kalsekar

Promod Kumar Bhagat

Jerold Osato

Eric Earl Johnson

James Craig Hunter

Yew-Aik Lim

David Frederick Lynch

Naiqian Han

Fei Wu

Shawyon Jafari

Chuan Ying Wang

Byung Seok Kwon

Zongbin Wang

Akshay Gunaji

Kesong Hu

Dorothea Buechel-Rimmel

Hyung Je Woo

Minh Anh Anh Nguyen

Upendra Avachat

The disclosure relates to in-ear electronic devices. According to one aspect, the in-ear electronic device comprises a housing shaped to be inserted into an ear canal of a human, a set of electrodes configured to sense electrical signals when the housing is inserted into the ear canal, an antenna, a radio frequency (RF) transceiver, an audio transducer, and a control circuit. The control circuit is configured to provide an audio signal to the audio transducer based on an input RF signal received on the antenna, wherein the audio transducer plays the audio signal into the ear canal. The control circuit is configured to form an output signal based on one or more electrical signals from the set of electrodes. The control circuit is configured to passively backscatter the input RF signal on the antenna based on the output signal to wirelessly transmit the output signal.

Secure actuation with in-ear electronic device

The present technology discloses a frameless modular multi-functional electronic device. The electronic device includes a base module with a processor and multiple component modules, at least one of which is configured to connect directly in contact with the base module. The modules each include a connecting member to slidably align and mate the component modules together, and an electrical interface to transmit digital information and energy between connected base and component modules. The component modules are interchangeably connected directly in contact with each other and, when assembled, form the frameless modular multi-functional electronic device.

System and method for a frameless modular electronic device

Exemplary temperature modulation methods may include delivering a gas through a purge line extending within a substrate support. The gas may be directed to a backside surface of the substrate support opposite a substrate support surface. The purge line may extend along a central axis of a shaft, the shaft being hermetically sealed with the substrate support. The substrate support may be characterized by a center and a circumferential edge. A first end of the purge line may be fixed at a first distance from the backside surface of the substrate support. The methods may include flowing the gas at a first flow rate via a flow pathway to remove heat from the substrate support to achieve a desired substrate support temperature profile.

Systems and methods for substrate support temperature control

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The assemblies may include a power transmission rod coupled with the electrode. The power transmission rod may include a material characterized by a coefficient of thermal expansion of less than or about 10×10/° C.

Semiconductor substrate support power transmission components

Exemplary semiconductor processing systems may include a chamber body including sidewalls and a base. The chamber body may define an interior volume. The systems may include a substrate support extending through the base of the chamber body. The substrate support may be configured to support a substrate within the interior volume. The systems may include a faceplate positioned within the interior volume of the chamber body. The faceplate may define a plurality of apertures through the faceplate. The systems may include a leveling apparatus seated on the substrate support. The leveling apparatus may include a plurality of piezoelectric pressure sensors.

Semiconductor substrate support leveling apparatus

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may include a plurality of substrate support assemblies equal to the number of apertures defined through the lid plate. Each assembly may be disposed in one of the processing regions and may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. Each assembly may include a heater embedded within the chuck body. Each assembly may include bipolar electrodes between the heater and the substrate support surface. Each assembly may include a conductive mesh embedded within the body between the heater and bipolar electrodes.

Bipolar esc with balanced RF impedance

A chucking system reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. Initial chucking voltages are applied to each of two electrodes, and an initial current provided to at least a first electrode of the two electrodes is measured. A process is initiated that affects a DC voltage of the substrate, then a modified current provided to at least the first electrode is measured. A modified chucking voltage for a selected one of the two electrodes is determined that will reduce chucking force imbalance across the substrate based at least on the initial current and the modified current. The modified chucking voltage is then provided to the selected one of the two electrodes.

Real time bias detection and correction for electrostatic chuck

Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. Peripheral edges of one or both of the first and second bipolar electrodes may extend beyond an outer periphery of the seat. The assemblies may include an RF power supply coupled with the first and second bipolar electrodes. The assemblies may include a first floating DC power supply coupled with the first bipolar electrode. The assemblies may include a second floating DC power supply coupled with the second bipolar electrode.

Bipolar electrostatic chuck to limit DC discharge

Exemplary semiconductor processing systems include a processing chamber, a power supply, and a chuck disposed at least partially within the processing chamber. The chuck includes a chuck body defining a vacuum port. The chuck also includes first and second coplanar electrodes embedded in the chuck body and connected to the power supply. In some examples, coplanar electrodes include concentric electrodes defining a concentric gap in between. Exemplary semiconductor processing methods may include activating the power supply for the electrostatic chuck to secure a semiconductor substrate on the body of the chuck and/or activating the vacuum port defined by the body of the electrostatic chuck. Some processing can be carried out at increased pressure, while other processing can be carried out at reduced pressure with increased chucking voltage.

Multi-pressure bipolar electrostatic chucking

Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Pedestal for substrate processing chambers

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include a heater embedded within the electrostatic chuck body. The substrate support assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The first bipolar electrode may include at least two separated mesh sections, with each mesh section characterized by a circular sector shape. The substrate support assemblies may include a second bipolar electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The second bipolar electrode may include a continuous mesh extending through the at least two separated mesh sections of the first bipolar electrode.

High temperature bipolar electrostatic chuck

Methods of manufacturing a semiconductor processing chamber showerheads may include forming a melted aluminum alloy composition, cooling the melted aluminum alloy composition at a rate of at least 103 K/sec to form solid aluminum alloy particles, and forming a core region of a showerhead from the solid aluminum alloy particles. The core region of the showerhead may include an inner core region and an outer core region that may be coupled together. The inner core region may define a plurality of apertures. The outer core region may define a channel that receives a heating element. The methods may include coating the core region with one of aluminum or aluminum oxide and joining a peripheral edge of the outer core region with an inner edge of a metallic annular liner. The metallic annular liner may have a lower thermal conductivity than the core region of the showerhead.

Fabrication of a high temperature showerhead

Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

Heated pedestal design for improved heat transfer and temperature uniformity

Exemplary substrate support assemblies may include a platen characterized by a first surface configured to support a semiconductor substrate. The assemblies may include a first stem section coupled with a second surface of the platen opposite the first surface of the platen. The assemblies may include a second stem section coupled with the first stem section. The second stem section may include a housing and a rod holder disposed within the housing. The second stem section may include a connector seated within the rod holder at a first end of the connector. The second stem section may include a heater rod disposed within the first end of the connector and a heater extension rod coupled with the connector at a second end of the connector. The second stem section may include an RF rod and an RF strap coupling the RF rod with an RF extension rod.

Substrate support assemblies and components

Growing community of inventors

Sunnyvale, CA, United States of America

Jian Li