Xilinx, Inc.

United Microelectronics Corp.

Jian Jun Shi

Randy J Simmons

Tho Le La

Lee Ni Chung

Andreas L Astuti

Srinivasa R Parthasarathy

Examples described herein provide a method for evaluating a programmable logic device (PLD) for compatibility with user designs. The method includes using a processor-based system: obtaining an indication of one or more failure bits of configuration memory of a programmable logic device (PLD); determining whether each of the one or more failure bits corresponds to a configuration memory bit to be used by a first PLD user design; if any of the one or more failure bits corresponds to a configuration memory bit to be used by the first PLD user design, classifying the PLD as unusable for the first PLD user design; and if none of the one or more failure bits corresponds to a configuration memory bit to be used by the first PLD user design, classifying the PLD as usable for the first PLD user design.

Method for adaptively utilizing programmable logic devices

A semiconductor device includes a substrate, a gate structure, a source/drain region, a contact opening, an etching stop layer, an interlayer dielectric layer, and a first contact structure. The substrate includes a buried insulation layer, a semiconductor layer, and an isolation structure. The semiconductor layer is disposed on the buried insulation layer. The gate structure is disposed on the semiconductor layer. The isolation structure and the source/drain region are disposed in the semiconductor layer. The contact opening penetrates at least a part of the substrate. The etching stop layer is disposed on the gate structure, the source/drain region, a sidewall of the contact opening, and a bottom of the contact opening. The interlayer dielectric layer is disposed on the etching stop layer. The first contact structure penetrates the interlayer dielectric layer and the etching stop layer in the contact opening.

Semiconductor device and manufacturing method thereof

Operation of an internal voltage supply level (Vgg) of an IC is characterized over operating temperature or at a selected temperature to determine a temperature-equivalent internal voltage level. The internal voltage supply of the IC is set to the temperature-equivalent level, and the IC is tested at room temperature to screen for low-temperature defects or high-temperature defects.

Growing community of inventors

Singapore, Singapore

Jian Jun Shi