National Taiwan University

Industrial Technology Research Institute

Jian-Jang Huang

Yung-Hui Yeh

Chun-Cheng Cheng

Chih-Chung Yang

Horng-Shyang Chen

Chih-Hao Wang

Dong-Ming Yeh

Chi-Feng Huang

Shih-Hua Hsiao

Kuang-Chung Liu

Chih-Feng Lu

Tsung-Yi Tang

Liang-Yu Su

Yen-Cheng Lu

Jeng-Jie Huang

Yung-Sheng Chen

A semiconductor device comprises a substrate, a patterned conductive layer, a first transistor structure and a second transistor structure. The patterned conductive layer is formed on the substrate. The first transistor structure includes a first source, a first gate and a first drain and is electrically connected to the patterned conductive layer by flip-chip bonding. The second transistor structure includes a second source, a second gate and a second drain and is electrically connected to the patterned conductive layer by flip-chip bonding. The first gate is electrically connected to the second source through the patterned conductive layer, and the first source is electrically connected to the second drain through the patterned conductive layer.

Cascode transistor device and manufacturing method thereof

An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.

Oxide semiconductor thin-film transistor

A method for controlling the color contrast of a multi-wavelength light-emitting diode (LED) made according to the present invention is disclosed. The present invention includes at least the step of increasing the junction temperature of a multi-quantum-well LED, such that holes are distributed in a deeper quantum-well layer of the LED to increase luminous intensity of the deeper quantum-well layer, thereby controlling the relative intensity ratios of the multiple wavelengths emitted by the LED. The step of increasing junction temperature of the multi-quantum-well LED is achieved either by controlling resistance through modulating thickness of a p-type electrode layer of the LED or by modifying the mesa area size to control its relative heat radiation surface area.

Method for controlling color contrast of a multi-wavelength light-emitting diode

Growing community of inventors

Taipei, Taiwan

Jian-Jang Huang