Taiwan Semiconductor Manufacturing Comp. Ltd.

Jian-Hua Chen

Tien-Lu Lin

Tai-I Yang

Yung-Chih Wang

Hsiang-Wei Liu

Yu-Chieh Liao

Hsiang-Lun Kao

Tien-I Bao

Cheng-Chi Chuang

Chia-Tien Wu

A method comprises forming a first conductive line and a second conductive line in a first dielectric layer over a substrate, each having a planar top surface, applying an etch-back process to the first dielectric layer until a dielectric portion between the first conductive line and the second conductive line has been removed, and the first conductive line and the second conductive line have respective cross sectional shapes including a rounded surface and two rounded corners and depositing a second dielectric layer over the substrate, while leaving a first air gap between the first conductive line and the second conductive line.

Metal line structure and method

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a dielectric layer over a semiconductor substrate. The semiconductor device structure also includes a first conductive feature in the dielectric layer. A portion of the dielectric layer has a top surface that is provided on a different level in relation to a top surface of the first conductive feature. The semiconductor device structure further includes a second conductive feature in the dielectric layer and extending from a bottom surface of the first conductive feature. The portion of the dielectric layer is separated from the second conductive feature by a gap. A distance between the portion of the dielectric layer and the second conductive feature becomes smaller along a direction from the top surface of the first conductive feature towards the bottom surface of the first conductive feature.

Structure and formation method of semiconductor device structure

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dielectric layer over a semiconductor substrate. The method also includes forming an opening in the dielectric layer. A dielectric constant of a first portion of the dielectric layer is less than that of a second portion of the dielectric layer surrounding the opening. The method further includes forming a conductive feature in the opening. The second portion is between the first portion and the conductive feature. In addition, the method includes modifying an upper portion of the first portion to increase the dielectric constant of the upper portion of the first portion. The method also includes removing the upper portion of the first portion and the second portion.

A device comprises a first rounded metal line in a metallization layer over a substrate, a second rounded metal line in the metallization layer, a first air gap between sidewalls of the first rounded metal line and the second metal line, a first metal line in the metallization layer, wherein a top surface of the first metal line is higher than a top surface of the second rounded metal line and a bottom surface of the first metal line is substantially level with a bottom surface of the second rounded metal line and a second air gap between sidewalls of the second rounded metal line and the first metal line.

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Hsinchu, Taiwan

Jian-Hua Chen