Taiwan Semiconductor Manufacturing Comp. Ltd.

Jian-Ci Lin

Kei-Wei Chen

Li-Chieh Wu

Kuo-Hsiu Wei

Chia Hsuan Lee

Chun-Wei Hsu

Liang-Guang Chen

Yi-Sheng Lin

Chi-Jen Liu

Tang-Kuei Chang

Chi-Hsiang Shen

Chia-Wei Ho

Yang-Chun Cheng

Ting-Hsun Chang

Ji Cui

Jeng-Chi Lin

Chih-chieh Chang

A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.

Slurry composition, semiconductor structure and method for forming the same

A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.

Structure and formation method of semiconductor device with conductive feature

Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

Methods of forming an abrasive slurry and methods for chemical- mechanical polishing

Methods of forming an abrasive slurry and methods for chemical-mechanical polishing

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Jian-Ci Lin