Semiconductor Manufacturing International (shanghai) Corporation

Keiper Seating Mechanisms Co., Ltd.

Adient Engineering and IP Gmbh

Adient Yanfeng Seating Mechanism Co., Ltd

Jian Chang

Meng Hong Tsai

Lily Jiang

Qi Rong Wang

Erik Sprenger

Qi Wang

Stefan Josten

Juergen Stemmer

Zhenyi Tang

Peijing Sun

Qichao Li

Zhihui Zhang

Yutong Guo

Jiahao Shen

Jinghui Chen

Peina Lian

Provided is an electric cable driving mechanism having a self-return function. The electric cable driving mechanism includes a housing assembly, an electric motor, a three-stage transmission mechanism and a multifunctional nut, the three-stage transmission mechanism includes a coil spring assembly, the electric motor is fixed to the housing assembly, and the three-stage transmission mechanism and the multifunctional nut are mounted in the housing assembly; and the multifunctional nut includes two cable mounting grooves and is in transmission connection to the electric motor by means of the three-stage transmission mechanism. According to the electric cable driving mechanism having a self-return function of the present disclosure, the three-stage transmission mechanism is used, and outputs a larger force compared with two-stage transmission; and a split multifunctional screw rod is easy to mount, such that mounting of a coil spring during assembly is prevented from scratching the screw rod.

Electric cable driving mechanism having self-return function

Disclosed is a one-way damping structure, comprising a spring, a drive element and a friction force generation member, the spring and the drive element being connected such that the spring is driven by means of the drive element; the spring comprises a fixing portion, a connecting portion and an annular portion, the connecting portion being located between the fixing portion and the annular portion and connecting the fixing portion to the annular portion, and the fixing portion being fixed; and the annular portion comprises at least half a turn for defining a spring opening which spirally extends in the circumferential direction, and slides relative to the friction force generation member so as to generate friction torque. Also disclosed is an adjusting assembly and a seat height adjuster utilizing one-way damping properties in which the spring of the one-way damping structure generates different torques in different rotation directions.

One-way damping structure and adjusting assembly comprising one-way damping structure

A vehicle seat longitudinal adjuster () includes two guide rail pairs (P, P) with a first guide rail () and a second guide rail () movable with respect to the first guide rail, a motor unit (), a gear unit (G) with a gear rotary shaft () connected to the first guide rail and a rotatable gear element (). A transmission unit () is coupled with the gear unit and the motor unit to transmit torque to the gear rotary shaft. A gearbox () receives the gear unit. A support () receives the gearbox inside a gap (BR) formed between the guide rails and passes through a second rail opening () and extends out of the guide rail opening and closes the second rail opening. A vehicle seat (), has the longitudinal adjuster for mechanically and longitudinally adjusting the vehicle seat.

Longitudinal adjuster for vehicle seat

A method for fabricating flash memory devices, e.g., NAND, NOR, is provided. The method includes providing a semiconductor substrate. The method includes forming a second polysilicon layer overlying a plurality of floating gate structures to cause formation of an upper surface provided on the second polysilicon layer. The upper surface has a first recessed region and a second recessed region. The method includes depositing a dielectric material overlying the upper surface to fill the first recessed region and the second recessed region to form a second upper surface region and cover a first elevated region, a second elevated region, and a third elevated region. The method subjects the second upper surface region to a chemical mechanical polishing process to remove the first elevated region, the second elevated region, and the third elevated region to cause formation of a substantially planarized second polysilicon layer free from the fill material.

Method and structure for performing a chemical mechanical polishing process

A method for fabricating flash memory devices, e.g., NAND, NOR, is provided. The method includes providing a semiconductor substrate. The method includes forming a second polysilicon layer overlying a plurality of floating gate structures to cause formation of an upper surface provided on the second polysilicon layer. The upper surface has a first recessed region and a second recessed region. The method includes depositing a dielectric material overlying the upper surface to fill the first recessed region and the second recessed region to form a second upper surface region and cover a first elevated region, a second elevated region, and a third elevated region. The method forms at least one dielectric spacer within the first recessed region and at least one dielectric spacer within the second recessed region to form a resulting surface region, and subjects the resulting surface region to a chemical mechanical polishing process to cause formation of a substantially planarized second polysilicon layer free from the dielectric material.

A method for fabricating flash memory devices, e.g., NAND, NOR, is provided. The method includes providing a semiconductor substrate. The method includes forming a second polysilicon layer overlying a plurality of floating gate structures to cause formation of an upper surface provided on the second polysilicon layer. The upper surface has a first recessed region and a second recessed region. The method includes depositing a doped dielectric material overlying the upper surface to fill the first recessed region and the second recessed region to form a second upper surface region and cover a first elevated region, a second elevated region, and a third elevated region. The method subjects the second upper surface region to a chemical mechanical polishing process to remove the first elevated region, the second elevated region, and the third elevated region to cause formation of a substantially planarized second polysilicon layer free from the fill material.

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Shanghai, China

Jian Chang