Omnivision Technologies, Inc.

Omnivision Technologies (Shanghai) Co., Ltd.

Jiaming Xing

Jing Ye

Gang Chen

Dyson Hsinchih Tai

Cunyu Yang

Xi-Feng Gao

Xifeng Gao

Zhetian Shi

An image sensor includes a semiconductor material having a front side and a back side opposite the front side. The image sensor also includes a shallow trench isolation (STI) structure, an interlayer dielectric, an intermetal dielectric, and a contact area. The STI structure extends from the front side of the semiconductor material into the semiconductor material. The interlayer dielectric is disposed between the front side of the semiconductor material and the intermetal dielectric. The contact area is disposed proximate to a lateral edge of the semiconductor material. The contact area includes a metal interconnect disposed within the intermetal dielectric and a plurality of contact plugs at least partially disposed within the interlayer dielectric. The contact area also includes a contact pad. The plurality of contact plugs is coupled between the contact pad and the metal interconnect.

Backside illuminated image sensor with improved contact area

A method of fabricating a semiconductor structure is disclosed, in which a pad above a connecting section and metal structures above a functional section are formed from the same metal layer. This design enables the simultaneous formation of the pad and the metal structures by forming a single metal layer and performing thereon a selective etching process, thereby leading to the advantages of process simplification, throughput improvement and cost reduction.

Method of fabricating semiconductor structure

Growing community of inventors

Shanghai, China

Jiaming Xing