National Institute for Materials Science

Jiamin Chen

Kazuhiro Hono

Hiroaki Sukegawa

Yuya Sakuraba

Jun Liu

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate, a base layerhaving a B2 structure laminated on the silicon substrate, a first non-magnetic layerlaminated on the base layerhaving a B2 structure, and a giant magnetoresistance effect layerhaving at least one laminate layer including a lower ferromagnetic layer, an upper ferromagnetic layer, and a second non-magnetic layerdisposed between the lower ferromagnetic layerand the upper ferromagnetic layer

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Tsukuba, Japan

Jiamin Chen