Applied Materials, Inc.

Jiahua Yu

Christopher Dennis Bencher

Huixiong Dai

Hui W Chen

Raymond Hoiman Hung

Michael Duane

Yongmei Chen

Jen Shu

Chorng-Ping Chang

Christopher Siu Wing Ngai

Susie Xiuru Yang

Kenneth MacWilliams

Xumou Xu

Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.

Double exposure patterning with carbonaceous hardmask

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Milpitas, CA, United States of America

Jiahua Yu