Kioxia Corporation

Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Jiahong Wu

Yuji Yamada

Katsuhiko Kawabata

Ayako Mizuno

Sungjae Lee

Mitsumasa Ikeuchi

Sho Kato

Miki Takimoto

An impurity recovery device according to the present embodiment may recover impurities present on a surface of a substrate. The substrate may be placed on a stage. A sprayer may spray a recovery liquid toward the substrate along a direction from a side of a central part of the substrate to a side of the end part of the substrate. A recovery portion may recover the recovery liquid from the end part of the substrate.

Impurity recovery device and impurity recovery method

A collecting device includes a stage configured to place a substrate. A magnetic field generating unit holds, by a magnetic field, a first liquid containing a magnetic fluid and a collecting liquid to bring the first liquid into contact with at least an end portion of the substrate. A collecting unit collects the first liquid from the magnetic field generating unit. A separating unit separates the collecting liquid from the first liquid.

Collecting device and collecting method

The present invention provides a method for analyzing a silicon substrate, by which impurities such as a very small amount of metal in a silicon substrate provided with a thick nitride film can be analyzed with high accuracy with ICP-MS, and is characterized by use of a silicon substrate analysis apparatus including an analysis scan port having a load port, a substrate conveyance robot, an aligner, a drying chamber, a vapor phase decomposition chamber, an analysis stage and a nozzle for analysis of a substrate; an analysis liquid collection unit; and an analyzer for performing inductive coupling plasma analysis.

Method for analyzing silicon substrate

An analysis apparatus includes a stage on which an analysis sample as an analysis target and a first adjustment sample used for adjusting a focus are provided. A laser generation unit generates a laser beam for vaporizing the analysis sample or the first adjustment sample by irradiating the sample with the laser beam. A detection unit detects a signal intensity of an element of the analysis sample or the first adjustment sample vaporized by irradiation with the laser beam. A controller determines a focus position of the laser beam with respect to a front surface position of the first adjustment sample based on the signal intensity of the first adjustment sample, and performs a control such that the focus position of the laser beam corresponds with a front surface of the analysis sample.

Analysis apparatus and analysis method

According to one embodiment, an analysis apparatus includes a stage on which to place a sample, a light source, a film thickness measurement unit, and a controller. The light source generates a laser beam to irradiate the sample with the laser beam to cause vaporization of the sample. The film thickness measurer measures a thickness of the sample at a first position where the laser beam irradiates the sample. The controller controls at least one irradiation condition of the laser beam based on the measured thickness of the sample.

An analysis pretreatment device according to an embodiment includes a chamber capable of containing an analysis object therein. A pressure reducer reduces pressure inside the chamber. An introducing part vaporizes a liquid and introduces the vaporized liquid into the chamber. A first supplier supplies water in a liquid state to the introducing part. A second supplier supplies hydrofluoric acid in a gas state to the introducing part. The introducing part introduces a mixed gas into the chamber. The mixed gas includes vaporized water, which is obtained by vaporizing water in a liquid state, and hydrofluoric acid in a gas state.

Analysis pretreatment device

A metal collection solution according to an embodiment contains 48 wt % or more of HNO, 6 wt % or less of HCl, and 5 wt % or less of HF. The metal collection solution can collect noble metals and can scan on a substrate. The metal collection solution can be used to collect the noble metals adhered to a surface of the substrate.

Growing community of inventors

Mie, Japan

Jiahong Wu