No. 24 Research Institute of China Electronics Technology Group Corporation

China Electronics Technology Group Corporation No. 24 Research Institute

Jiahao Zhang

Hequan Jiang

Peijian Zhang

Kaizhou Tan

Yonghui Yang

Tian Xiao

Ruzhang Li

Yuxin Wang

Yi Zhong

Sheng Qiu

Zhaohuan Tang

Liang Chen

Wei Cui

Peng Wang

Xiaojun Fu

Xiaoquan Li

Ying Pei

Pengfei Wang

Guangbo Li

The disclosure provides a power semiconductor device and manufacturing method thereof. A plurality of second resistive field plate structures extending through an epitaxial layer in a first direction into a substrate are arranged in a termination region of the epitaxial layer and the plurality of second resistive field plate structures are arranged radially in a first plane. A plurality of tightly coupled second resistive field plates extending from a side close to a cell region to a side far away from the cell region form a more uniform three-dimensional electric field distribution diverging around the cell region, which optimizes a guiding and binding effect on a charge in a space depletion region of the cell region and improves a withstand voltage performance of the whole power semiconductor device.

Power semiconductor device and manufacturing method thereof

The MOS device with resistive field plate for realizing conductance modulation field effect in the present invention is based on the existing trench gate MOS device, and a semi-insulating resistive field plate electrically connected to the trench gate structure and the drain structure is added in the drift region, where the trench gate structure can control the on-off of the MOS channel, and the semi-insulating resistive field plate can adjust the doping concentration of the drift region to modulate the conductance of the on-state drift region and the distribution of off-state high-voltage blocking electric field, thus a lower on-resistance can be obtained. In addition, the modern 2.5-dimensional processing technology based on deep trench etching is adopted in the present invention, which is conducive to the miniaturization design and high density design of the structure and is more suitable for the More than Moore (beyond Moore) development of modern integrated semiconductor devices.

MOS device with resistive field plate for realizing conductance modulation field effect and preparation method thereof

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Chongqing, China

Jiahao Zhang