Innolux Corporation

Jia-Yuan Chen

Kuan-Feng Lee

Tsung-Han Tsai

Hsiao-Lang Lin

Yuan-Lin Wu

Jui-Jen Yueh

A manufacturing method of an electronic device is provided. The method includes providing a substrate, providing a plurality of signal lines on the substrate, providing a first pad on the substrate, providing a second pad on the substrate, and providing a first electronic component. The first electronic component includes a first electrode. One of the plurality of signal lines is connected to the first pad, and the first electrode of the first electronic component is connected to the first pad. The method further includes removing the first electronic component from the substrate when the first electronic component is dysfunctional, and providing a second electronic component on the substrate and connected to the second pad.

Manufacturing method of an electronic device

An electronic device includes a substrate, an electronic element, a layer, a plurality of first bonding pads, a transistor and a plurality of second bonding pads. The electronic element is disposed on the substrate. The layer is disposed between the substrate and the electronic element. The plurality of first bonding pads are disposed corresponding to the electronic element. The transistor is electrically connected with the electronic element through the plurality of first bonding pads. The substrate is disposed between the plurality of first bonding pads and the plurality of second bonding pads. The transistor is disposed between the plurality of first bonding pads and the substrate.

Electronic device

A method of manufacturing an electronic device, comprising: providing a carrier substrate with a plurality of light-emitting units disposed thereon, the plurality of light-emitting units being spaced with a first pitch (P) in a first direction and a second pitch (P) in a second direction that is perpendicular to the first direction; providing a driving substrate; and transferring at least a portion of the plurality of light-emitting units to the driving substrate to form a transferred portion of the plurality of light-emitting units on the driving substrate, the transferred portion being spaced with a third pitch (P) in a third direction and a fourth pitch (P) in a fourth direction that is perpendicular to the third direction; wherein the first pitch (P), the second pitch (P), the third pitch (P), and the fourth pitch (P) are satisfied following relations: P=mP; and P=nP, m and n are positive integers.

Electronic device comprising a transferred portion of plurality of chips and method for manufacturing the same

A display device includes a backlight module and a display module. The backlight module includes a plurality of light emitting units, a base plate and at least one controller. The light emitting units are disposed on a first surface of the base plate, the controller is disposed on a second surface of the base plate, the second surface is opposite to the first surface, and at least one of the light emitting units is electrically connected to the controller. The display module is disposed on the first surface, and the light emitting units are disposed between the display module and the base plate. The backlight module includes a covering layer, an optical film, and a plurality of pins, the covering layer is disposed on the first surface of the base plate, and the pins are disposed between the covering layer and the optical film.

Display device

An electronic device includes an object substrate, an electronic unit and an electrostatic discharge protective unit. The object substrate includes a bonding pad. The electronic unit includes an electrode bonding on the bonding pad. The electrostatic discharge protective unit is located in the object substrate and electrically connected to the bonding pad.

Electronic device comprising an electrostatic discharge protective unit

A display device includes a first display unit emitting a red light having a first output spectrum corresponding to a highest gray level of the display device and a second display unit emitting a blue light having a second output spectrum corresponding to the highest gray level of the display device. The first output spectrum has a main wave with a first peak. The second output spectrum has a main wave with a second peak and a sub wave with a sub peak. The second peak corresponds to a main wavelength, the sub peak corresponds to a sub wavelength, and the main wavelength is less than the sub wavelength. An intensity of the second peak is greater than an intensity of the sub peak, and an intensity of the first peak is greater than the intensity of the sub peak.

The present disclosure provides a method for manufacturing a display device. The method includes providing a light emitting module, providing a driving module, providing a light conversion module, and assembling the light emitting module, the driving module, and the light conversion module to form a display assembly. The light emitting module is disposed between the light conversion module and the driving module.

Method for manufacturing display device

An electronic assembly is provided. The electronic assembly includes a first circuit structure including a conductive structure, a second circuit structure disposed on the first circuit structure, a plurality of electronic elements disposed on the first circuit structure, and a connecting element disposed on the first circuit layer. The connecting element is disposed between two adjacent ones of the plurality electronic elements and electrically connected to the second circuit layer and one of the two adjacent ones of the plurality of electronic elements.

Light-emitting modules and electronic devices including the same

An electronic device emitting an output light includes an optical layer. The electronic device emits the output light under an operation of a highest brightness. The output light has an output spectrum, an intensity integral of the output spectrum from 380 nm to 489 nm is defined as a first intensity integral, and an intensity integral of the output spectrum from 490 nm to 780 nm is defined as a second intensity integral. A ratio of the first intensity integral over the second intensity integral is defined as a first ratio, and the first ratio is greater than 0% and less than or equal to 7.5%.

A display device is provided. The display device includes a substrate, a driving layer, a light-emitting element, and a light-shielding element. The substrate has a surface. The driving layer includes a thin-film transistor. The thin-film transistor is disposed on the surface. The light-emitting element has a P-end and an N-end. The light-emitting element is disposed on the driving layer and arranged in such a way that a virtual line connecting the P-end and the N-end is parallel to the surface of the substrate. The light-shielding element is disposed between the light-emitting element and the thin-film transistor for blocking a light emitted from the light-emitting element from irradiating the thin-film transistor.

A display device includes a blue sub-pixel including a plurality of first light emitting units in a number of N1, a green sub-pixel including a plurality of second light emitting units in a number of N2, and a red sub-pixel including a plurality of third light emitting units in a number of N3. The first light emitting units, the second light emitting units and the third light emitting units all emit lights of blue color, and a green wavelength conversion layer and a red wavelength conversion layer are so arranged that the blue light from the second light emitting units and the blue light from the third light emitting units go through the green wavelength conversion layer and the red wavelength conversion layer respectively. N1 is greater than or equal to 6. N1<N2 and N1<N3, wherein N2/N1 is between 2.1 and 3.68, and N3/N1 is between 1.52 and 2.53.

Display device with varying number of light emitting units in red, green, and blue sub-pixels

An electronic device includes a light emitting structure, a light conversion structure and an electrode. The light conversion structure is disposed on the light emitting structure. The electrode forms a mesh structure, and the mesh structure surrounds the light conversion structure in a top view of the electronic device.

An electronic device includes a light source and an optical sensor. The light source emits a light having a maximum light intensity at a first wavelength A. The optical sensor has a maximum response value at a second wavelength B, and receives a reflected portion of the light that is reflected by an object. The integral value of the light intensity of the light from the wavelength 380 nm to the first wavelength A is I. The integral value of the light intensity of the light from the first wavelength A to the wavelength 780 nm is I. The first wavelength A, the second wavelength B, the integral value I, and the integral value Isatisfy the following equation: (B−A)*(I−I)>0.

An electronic device includes: a semiconductor layer; and a protecting layer disposed on the semiconductor layer, wherein the protecting layer has a region in which oxygen atomic percentages decrease toward the semiconductor layer.

Light emitting unit and display device

An electronic device includes a substrate, a first light-emitting unit, a first light conversion unit, and a first buffer layer. The first light-emitting unit is disposed on the substrate. The first light conversion unit is disposed on the first light-emitting unit. The first buffer layer is disposed between the first light conversion unit and the first light-emitting unit. The thickness of the first light conversion unit is greater than the thickness of the first light-emitting unit.

Growing community of inventors

Miao-Li County, Taiwan

Jia-Yuan Chen