Industrial Technology Research Institute

Jia-Xing Lin

Yu-Cheng Chen

Chi-Lin Chen

Tai-Ann Chen

Da-Wei Lee

Hung-Tse Chen

Yih-Rong Luo

Jung-Ya Hsieh

An information display system for a conveying device, the information display system comprising a driving mechanism, a flexible display loop driven by the driving mechanism to travel in a closed loop, and an image forming module configured to provide media to at least a section of the flexible display loop.

Information display system for passenger conveying device

A display system including a first set of conductive electrodes, a second set of conductive electrodes, and a display medium. The first set of conductive electrodes is configured to receive a selection signal. The second set of conductive electrodes is configured to interact with the first set of conductive electrodes for activating the reading or writing of display data. The second set of conductive electrodes is configured to receive a data signal and to activate the reading or writing of a target area of the display device, in response to the selection signal to the first set of conductive electrodes and the data signal to the second set of conductive electrodes. The display medium is movably coupled with the first and second sets of conductive electrodes. One or both of the first and the second sets of conductive electrodes have at least two electrically independent regions having an independent signal input for each region.

Display systems having electrically independent regions

A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.

Method of semiconductor thin film crystallization and semiconductor device fabrication

A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.

Method of controlling polysilicon crystallization

A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.

Method of fabricating a poly-silicon thin film

An amorphous silicon layer is formed on a substrate, and then a protective layer and a reflective layer are formed in turn to form a film stack on portions of the amorphous silicon layer. The reflective layer is a metal material with reflectivity of laser, and the protective layer is able to prevent metal diffusion. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer under the film stack of the protective layer and the reflective layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer to form poly-silicon having crystal grains with size of micrometers and high grain order.

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Panchiao, Taiwan

Jia-Xing Lin