Yangtze Memory Technologies Co., Ltd.

Other

Jia Wen Wang

Si Ping Hu

Jun Chen

Jifeng Zhu

Tao Wang

Zi Qun Hua

Shi Qi Huang

Meng Yan

Shuai Guo

Rui Yuan Xing

Tao Tao Ding

Shun Hu

Jia You Wang

Xiao Jin Wang

Chun Long Li

Zhenyu Lu

Qi Wang

Qian Tao

Pucheng Wang

Yang Fu

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first device layer is formed on a first substrate. A first bonding layer including a first bonding contact and a first bonding alignment mark is formed above the first device layer. A second device layer is formed on a second substrate. A second bonding layer including a second bonding contact and a second bonding alignment mark is formed above the second device layer. The first bonding alignment mark is aligned with the second bonding alignment mark, such that the first bonding contact is aligned with the second bonding contact. The first substrate and the second substrate are bonded in a face-to-face manner, so that the first bonding contact is in contact with the second bonding contact at a bonding interface, and the first bonding alignment mark is in contact with the second bonding alignment mark at the bonding interface.

Bonding alignment marks at bonding interface

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first interconnect layer including first interconnects is formed above a first substrate. A first bonding layer including first bonding contacts is formed above the first interconnect layer, such that each first interconnect is in contact with a respective first bonding contact. A second interconnect layer including second interconnects is formed above a second substrate. A second bonding layer including second bonding contacts is formed above the second interconnect layer, such that at least one second bonding contact is in contact with a respective second interconnect, and at least another second bonding contact is separated from the second interconnects. The first and second substrates are bonded in a face-to-face manner, such that each first bonding contact is in contact with one second bonding contact at a bonding interface.

Hybrid bonding using dummy bonding contacts

Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.

Wafer bonding method and structure thereof

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a substrate, a first device layer disposed on the substrate, and a first bonding layer disposed above the first device layer and including a first bonding contact and a first bonding alignment mark. The second semiconductor structure includes a second device layer, and a second bonding layer disposed below the second device layer and including a second bonding contact and a second bonding alignment mark. The first bonding alignment mark is aligned with the second bonding alignment mark at the bonding interface, such that the first bonding contact is aligned with the second bonding contact at the bonding interface.

Bonding alignment marks at bonding in interface

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with a respective second bonding contact at the bonding interface.

Hybrid bonding using dummy bonding contacts and dummy interconnects

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with one of the second bonding contacts at the bonding interface.

Embodiments of methods for forming three-dimensional (3D) memory devices are disclosed. In an example, a peripheral device is formed on a first substrate. A first interconnect layer is formed above the peripheral device on the first substrate. A dielectric stack including a plurality of dielectric/sacrificial layer pairs and a plurality of memory strings each extending vertically through the dielectric stack is formed on a second substrate. A second interconnect layer is formed above the memory strings on the second substrate. The first substrate and the second substrate are bonded, so that the first interconnect layer is below and in contact with the second interconnect layer. The second substrate is thinned after the bonding. A memory stack is formed below the thinned second substrate and including a plurality of conductor/dielectric layer pairs by replacing, with a plurality of conductor layers, sacrificial layers in the dielectric/sacrificial layer pairs.

Methods for forming three-dimensional memory devices

A rod pumping unit used in the oil field, which has high efficiency and saves power, characterized in that: for the connection of the 2.omega. crank and the main crank in the 2.omega. crank balance device there is provided a differential phase adjusting mechanism, for the walking beam balance there is provided beam balance mass lowering device having positioning mechanism or self positioning mechansim, these devices can be adjusted manually in non-stopped status or by computer. The advantages of the pumping unit of the present invention are that the torque fluctuation of the speed reducer is small, the negative work of the power machine is eliminated and the power consumption and the total weight of the machine are decreased greatly. The present invention may save power and material to 50% as compared with the conventional beam pumping unit.

Growing community of inventors

Wuhan, China

Jia Wen Wang