Changxin Memory Technologies, Inc.

Jia Wang

Ying Chu Wang

Sungsoo Chi

Fengqin Zhang

Shuyan Jin

Yuanyuan Sun

Liang Zhang

WeiBing Shang

Ying Wang

A method, device for checking data, an electronic device and a storage medium are provided. The method includes operations as follows. A memory array is read to obtain read data, and the read data is compressed to obtain first compressed data. The first compressed data is compared with second compressed data, the second compressed data being obtained by compressing written data corresponding to the read data. In responsive to that the first compressed data is consistent with the second compressed data, whether data of a predetermined bit in the read data is consistent with pre-stored original bit data is detected, to determine whether the read data is correct. It is determined that the read data is correct if the data of the predetermined bit is consistent with the pre-stored original bit data, otherwise it is determined that the read data is incorrect.

Method and device for checking data, electronic device, and storage medium

The present disclosure provides a method and an apparatus for detecting a data path, and a storage medium, relates to the technical field of semiconductors, and is applied to a process of detecting a data path of a semiconductor integrated circuit. The method for detecting a data path includes: disconnecting, by a detection apparatus, a connection between a global data line and a local data line in the data path, writing test data into the global data line in the data path via the data path through a write port of the data path, reading, by the detection apparatus, target data of the global data line under a preset condition, and further detecting a defect of the data path according to the test data and the target data.

Method and apparatus for detecting data path, and storage medium

A data writing method includes: receiving a first writing command, and selecting a target bank and a target column address according to the first writing command, data corresponding to the first writing command being first test data; writing the first test data into the target column address of the bank selected according to the first writing command, and latching the first test data on an address bus during the writing at least until a second writing command is executed; receiving the second writing command, and reselecting the target bank and the target column address according to the second writing command; and writing the first test data latched on the address bus into a reselected target column address of a reselected target bank.

Data writing method, test method, writing apparatus, medium, and electronic device

A data processing circuit includes a primary transmission path, multiple secondary transmission paths and multiple storage arrays which share the primary transmission path. Each storage array includes at least two sub-arrays, and the secondary transmission path is formed between each sub-array and the primary transmission path, and the sub-array transmits a signal through the secondary transmission path and the primary transmission path.

Data processing circuit and semiconductor memory divided into segments

A column select signal cell circuit, a bit line sense circuit and a memory are disclosed. The column select signal cell circuit includes four column select cells, each of which includes 4*N input and output ports, 4*N bit line connection ports and one control port. The control ports of a first column select cell and a fourth column select cell are connected to a first column select signal, and the control ports of a second column select cell and a third column select cell are connected to a second column select signal. The bit line connection ports of the first column select cell and the third column select cell are connected to 8*N bit lines of a first storage unit group, the bit line connection ports of the second column select cell and the fourth column select cell are connected to 8*N bit lines of a second storage unit group.

Column select signal cell circuit, bit line sense circuit and memory

A memory includes a storage circuit, a first reading circuit, a second reading circuit, and a plurality of correcting circuits. The storage circuit includes a plurality of sense amplifier arrays and a plurality of storage unit arrays. The sense amplifier arrays and the storage unit arrays are arranged alternately, and the sense amplifier arrays are configured to perform data reading and writing on the storage unit arrays. The first reading circuit is configured to compare a reference voltage signal with a signal on a first data line corresponding to the first reading circuit, and output a comparison result as read-out data. The second reading circuit is configured to compare the reference voltage signal with a signal on a first data line corresponding to the second reading circuit, and output a comparison result as read-out data.

Memory using dual sense amplifiers for error detection and correction

A storage device includes a storage circuit, a reading circuit, a first check circuit, and a second check circuit. The storage circuit includes a plurality of sense amplifier arrays and a plurality of storage unit arrays which are arranged alternately. A first data wire is electrically connected to each of the sense amplifier arrays. The reading circuit is configured to read data on the first data wire. Both the first check circuit and the second check circuit are electrically connected to the reading circuit. The reading circuit is configured to transmit a part of the read data to the first check circuit for error checking and/or correcting, and transmit another part of the read data to the second check circuit for error checking and/or correcting. The data transmitted to the first check circuit and the data transmitted to the second check circuit are respectively from adjacent sense amplifier arrays.

Storage device

A bit line sense circuit and a memory are disclosed in the present application. The bit line sense circuit includes: L storage unit groups, each storage unit group including H bit lines, both L and H being positive integers greater than or equal to 2; and M sense amplifier groups, configured to write or read storage data to or from the bit lines in the storage unit groups and electrically connected to the L storage unit groups, M being an integer multiple of L or L being an integer multiple of M. Two adjacent bit lines of the H bit lines are connected to the different sense amplifier groups.

Bit line sense circuit and memory

The invention relates to a detection circuit, a detection method, an electronic device, and a computer-readable storage medium. The detection circuit includes: an error correction coding module configured to obtain data to be checked, and perform, based on an error correction coding logic, error correction coding on the data to be checked, to output target coded data; a data mask interface configured to receive comparison coded data, where the comparison coded data is associated with ideally coded data of the data to be checked; a comparison checking module configured to perform a checking comparison on the target coded data and the comparison coded data to output a checking comparison result; and a logic verification module configured to determine a coding verification result of the error correction coding module based on the checking comparison result. The comparison checking data verifies correctness of the error correction coding logic.

Detection circuit and detection method, electronic device, and computer-readable storage medium

A memory includes: an input circuit, configured to: receive an outside clock signal, and output a first test clock signal; a test path selection circuit, connected to the input circuit, and configured to output a second test clock signal according to a read clock command; and an output circuit, connected to the test path selection circuit, and configured to convert the second test clock signal into a third test clock signal and output the third test clock signal to outside of the memory. In the embodiments of the disclosure, a time delay of inputting a clock signal into each chip under test is quantified, to acquire an actual output delay of the chip, thereby improving the accuracy of parallel tests of a plurality of chips.

Memory, memory test system, and memory test method

A pulse generation circuit and stagger pulse generation circuit are provided. The pulse generation circuit includes: an oscillation circuit that receives a control signal and generates a first oscillation signal according to the control signal; a period adjustment circuit that receives the first oscillation signal and a magnification selection signal and outputs a second oscillation signal, the period of the second oscillation signal is a period of the first oscillation signal or a period of an oscillation adjustment signal, and the second oscillation signal is selected according to the magnification selection signal; and a pulse conversion circuit that receives the second oscillation signal and outputs a pulse signal, the pulse of the pulse signal is generated according to the rising or falling edge of the second oscillation signal, and the pulse period of the pulse signal is the same as the oscillation period of the second oscillation signal.

Pulse generation circuit and stagger pulse generation circuit

A signal output circuit and a circuit for outputting a delayed signal are provided. The signal output circuit includes: a first control subcircuit, configured to receive a first pulse signal and an input signal and output a first adjustment signal, a first preset edge of the first adjustment signal has a first delay relative to a rising edge of the input signal; a second control subcircuit configured to receive a second pulse signal and the input signal and output a second adjustment signal; and the signal output subcircuit is configured to receive the first adjustment signal and the second adjustment signal, and output a delayed output signal, a rising edge of the delayed output signal is generated according to the first preset edge of the first adjustment signal, and a falling edge of the delayed output signal is generated according to the second preset edge of the second adjustment signal.

Signal output circuit and circuit for outputting delayed signal

A stagger signal generation circuit is provided. The stagger signal generation circuit includes: a stagger pulse generation circuit, configured to generate a first pulse signal according to a first control signal and generate a second pulse signal according to a second control signal, the first control signal and the second control signal being inverted signals, and the first pulse signal and the second pulse signal being stagger pulse signals; and a delay signal output circuit including G signal output circuits, G being an integer greater than or equal to 2. Each non-first-stage signal output circuits receives a delay output signal outputted by a respective previous-stage signal output circuit as an input signal of a current-stage signal output circuit, and a first-stage signal output circuit receives an initial input signal as an input signal of the first-stage signal output circuit.

Stagger signal generation circuit

A memory device and its addressing method are disclosed. The memory device includes: an input module for receiving an input signal including an access address, a command, and a decoding selection instruction; a memory array including memory blocks, each having memory units arranged in an array; and a control module including memory block local control units, which respectively connected to one of the memory blocks in one-to-one correspondence. The memory block local control unit includes: at least one decoding unit, which performs redundant decoding or normal decoding to the input signal. The input of the decoding unit is coupled to the input module and the output is coupled to one of the memory units. The device further includes a selection module; the input of the selection module is coupled to the input module, and the output is coupled to the decoding unit. The addressing efficiency of the memory device is improved.

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Hefei, China

Jia Wang