University of California

Jia-Qing Wang, Legal Representative

Stephen Edward Derenzo

Edith D Bourret-Courchesne

Jie Wang

Mattias K Klintenberg

Yetta D Porter-Chapman

Floyd J James

Herein is described a method for identifying semiconductor radiation detector materials based on the mobility of internally generated electrons and holes. It was designed for the early stages of exploration, when samples are not available as single crystals, but as crystalline powders. Samples are confined under pressure in an electric field and the increase in current resulting from exposure to a high-intensity source of ionization current (e.g.,Co gamma rays) is measured. A pressure cell device is described herein to carry out the method. For known semiconductors, the d.c. ionization current depends on voltage according to the Hecht equation, and for known insulators the d.c. ionization current is below detection limits. This shows that the method can identify semiconductors in spite of significant carrier trapping. Using this method and pressure cell, it was determined that new materials BiOI, PbIF, BiPbOCl, BiPbOBr, BiPbOI, BiGdOCl, PbOI, and PbOIare semiconductors.

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Shanghai, China

Jia-Qing Wang, Legal Representative