United Microelectronics Corp.

Wistron Corporation

Jia-He Lin

Yu-Hsiang Lin

Yu-Ruei Chen

Chun-Ta Lee

A semiconductor device includes a substrate, a plurality of planar transistors, a fin-type field effect transistor and a first nonactive structure. The substrate includes a first region and a second region. The first region includes a plurality of first planar active regions and a nonactive region. The nonactive region is located between or aside the plurality of first planar active regions and includes a second planar active region. The second region has a fin active region. The plurality of planar transistors are located in the plurality of first planar active regions within the first region. The fin-type field effect transistor is located on the fin active region within the second region. The first nonactive structure is located in the nonactive region between the plurality of planar transistors.

Semiconductor device and method of fabricating the same

An activate circuit for an electronic device includes a first node, a first transistor including a source coupled to a ground, a drain coupled to the first node, and a gate coupled to a battery voltage, a first diode including an anode coupled to an activate signal, and a cathode a first resistance coupled between the cathode of the first diode and the first node, a capacitor coupled between the first node and the ground having a logic low level, and a second transistor including a source coupled to the ground, a drain coupled to the activate signal, and a gate coupled to the first node.

Growing community of inventors

Taipei, Taiwan

Jia-He Lin