Globalfoundries Singapore Pte. Ltd.

Jia Hao Lim

Vinayak Bharat Naik

Kazutaka Yamane

Joel Tan

Structures for a laser-detection device including a magnetic-tunneling-junction layer stack and related methods. The structure has a magnetic-tunneling-junction layer stack including a fixed layer, a free layer, and an insulating spacer between the fixed layer and the free layer, and a power supply coupled to the magnetic-tunneling-junction layer stack. The power supply is configured to bias the magnetic-tunneling-junction layer stack to modulate an energy barrier of the magnetic-tunneling-junction layer stack for switching between a low-resistance state and a high-resistance state in response to receiving incident electromagnetic radiation of an intensity.

Laser-detection devices including a voltage-controlled magnetic-tunneling-junction layer stack

Structures including a magnetic-tunnel-junction layer stack and methods of forming such structures. The structure comprises a magnetic-tunneling-junction layer stack including a reference layer, an antiferromagnetic layer, a free layer positioned between the reference layer and the antiferromagnetic layer, and a tunnel barrier layer positioned between the reference layer and the free layer. The antiferromagnetic layer has a static magnetic field with a magnetization, and the antiferromagnetic layer is antiferromagnetically coupled to the free layer.

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Singapore, Singapore

Jia Hao Lim