United Microelectronics Corp.

Jia-Feng Fang

Yi-Wei Chen

Chen-Yi Weng

Jing-Yin Jhang

Rung-Yuan Lee

Wei-Jen Wu

Chia-Wei Liu

Chun-Hsien Lin

Ming-Yueh Tsai

Chih-Chien Liu

Chun-Yuan Wu

Yu-Hsiang Lin

Kun-Ju Li

Po-Cheng Huang

Yu-Ting Li

Fu-Shou Tsai

Wen-Chin Lin

Chih-Hsun Lin

Ching-Hsiang Chiu

Hao-Yeh Liu

A method for fabricating semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) stack on a substrate, performing an etching process to remove the MTJ stack for forming a MTJ, performing a deposition process to form a polymer on a sidewall of the MTJ, and removing the polymer to form a rough surface on the sidewall of the MTJ. Preferably, the MTJ could include a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer, in which the rough surface could appear on sidewall of the pinned layer, sidewall of the barrier layer, and/or sidewall of the free layer.

Semiconductor device and method for fabricating the same

A method for forming a semiconductor structure is provided. Multiple fins extending along a first direction are formed in a semiconductor substrate. The multiple fins includes a group of active fins, a pair of protection fins sandwiching about the group the active fins, and at least one dummy fin around the pair of protection fins. A fin cut process is performed to remove the at least one dummy fin around the pair of protection fins. After performing the fin cut process, trench isolation structures are formed within the trenches between the multiple fins. The trench isolation structures are subjected to an anneal process. After annealing the trench isolation structures, the pair of protection fins is removed.

Method for forming a semiconductor structure

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first material layer on the substrate; forming a stop layer on the first material layer; forming a second material layer on the stop layer; and performing a planarizing process to remove the second material layer, the stop layer, and part of the first material layer for forming a gate layer.

Method for fabricating semiconductor device

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.

Method for fabricating a semiconductor device

Growing community of inventors

Changhua County, Taiwan

Jia-Feng Fang