Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

University of California

Lt Materials Co., Ltd.

Sfc Co., Ltd.

Ji-Young Kim

Yoo-Sang Hwang

Min-Hee Cho

Dae-Ik Kim

Jin-Jun Park

Nak-jin Son

Augustin Jinwoo Hong

Hye-Soo Lee

Sun-Haeng Jo

Mu-Hyun Kim

Kang L Wang

Jeong-Hee Han

Jin-Goo Kang

Yong-Jik Park

Chang-Sub Lee

Hyeong-sun Hong

Seong-hoon Kang

Hyoung-sub Kim

Yo-Han Ahn

Dong-Soo Woo

Hyoung-Sub Kim

Seung-Jun Lee

Yong-jin Kim

Sung-Hee Lee

Tae-Young Chung

Hyun-Woo Chung

Je-Min Park

Kyeong-Koo Chi

Sun-Hee Lee

Byung-Jun Park

Jung-Hwa Lee

Seung-Hwan Kim

In-Seok Yeo

Chang-Jin Kang

Chang-Hyun Cho

Ki-Seok Lee

Won-Jun Song

Gyo-young Jin

Hyun-ki Kim

Soo-Ho Shin

Sung-Hee Han

Sung-eui Kim

Young-Moon Choi

Jong-Bom Seo

Sun-Woo Lee

Moon-Jae Lee

Dong-Kyu Lee

Jae-Bok Kim

Hoon Jeong

Seong-Hoon Kang

Young-Seung Cho

Hyo-Seok Kim

Young-Hee Lee

Dae-Sin Kim

Chan-Won Kim

Sung-Hoon Chung

Jun-soo Lee

Na-Ra Kim

Kwan-Hee Lee

Bong-Soo Kim

Sung-Min Hwang

Jin-Ho Kim

Joo-Young Kim

Myeong-Cheol Kim

Mi-Kyung Kim

Young-In Hwang

Joon-Sung Lim

Bo-Kun Choi

Chang-Hwan Kim

Dong-jin Lee

Hye-Dong Kim

Won-Jang Jeong

Dong-Jun Kim

Je-min Park

Jae-Hyoung Park

Yong-Chul Oh

Ji-Won Kim

Mi-Sun Lee

Dae-Hyuk Choi

Jin-Seok Choi

Joo-Dong Lee

Sang-jun Park

Choong-Hoon Lee

Sang-chul Shin

Gyu-Cheol Choi

Sang-Oh Park

Ji-Hwan Kim

Hyo-June Kim

Yoon-Jeong Choi

Sang-yong Kim

Dong-Seok Ham

Kang-Lung Wang

Jin-Mok Kim

Gi-Back Lee

Woo-Sung Yang

Jae-yup Lee

Seong-Jong Park

Joon-Seok Oh

Su-Jin Lee

Jung-Su Ha

The present specification relates to a heterocyclic compound represented by Chemical Formula 1, and an organic light emitting device including the same.

Heterocyclic compound and organic light emitting device comprising the same

A vertical semiconductor device including a plurality of vertical memory cells on an upper surface of a first substrate, an adhesive layer on a lower surface of the first substrate that is opposite to the upper surface of the first substrate, a second substrate having first peripheral circuits thereon, a lower insulating interlayer on the second substrate, and a plurality of wiring structures electrically connecting the vertical memory cells and the first peripheral circuits. A lower surface of the adhesive layer and an upper surface of the lower insulating interlayer may be in contact with each other.

Vertical semiconductor devices including vertical memory cells and peripheral circuits under the vertical memory cells

The present specification relates to a heterocyclic compound represented by Chemical Formula 1, and an organic light emitting device comprising the same.

Heterocyclic compound and organic light emitting device comprising same

A semiconductor device includes a plurality of conductive structures arranged on a substrate and spaced apart from each other in a second direction substantially perpendicular to a first direction, in which each of the plurality of conductive structures extends in the first direction. A plurality of contact structures are arranged between the conductive structures in an alternating arrangement and spaced apart from each other in the first direction. A plurality of insulation structures are arranged in a space between the conductive structures and between the contact structures. A plurality of air spacers are arranged between the alternating arrangement of the plurality of conductive structures and the plurality of contact structures, respectively and spaced apart from each other in the first direction.

Semiconductor devices

A method and device are provided for providing human network information. Information associated with user contacts is received from at least one external server. A first schema of the information associated with user contacts is converted into a specific schema. Relationship information related to a first user is generated based on the information associated with the user contacts converted into the specific schema. The relationship information related to the first user includes data related to the first user and data related to a relationship between the first user and other users.

Method for providing human network management service in mobile terminal

An electronic device according to various embodiments comprises a camera module, a communication module, and a processor electrically connected to the camera module and the communication module, wherein the processor acquires an exposure value for an image inputted using the camera module, acquires lighting control-related information from at least one lighting device on the basis of a network connected using the communication module, and can generate a signal for adjusting at least one piece of the lighting control-related information of the at least one lighting device on the basis of the exposure value and a preset lighting control-related information set value. In addition, other embodiments are possible.

Electronic device and control method therefor

A semiconductor device includes a substrate including a first region and a second region, a buried gate structure located on a first recess in the first region of the substrate, and a recess gate structure located on a second recess in the second region of the substrate, wherein the buried gate structure is buried in the substrate, an upper portion of the recess gate structure is not buried in the substrate, and a first work function adjustment layer in the buried gate structure may include a material identical to a material included in a second work function layer of the recess gate structure.

Semiconductor device

Provided are a mobile terminal and method for providing a human network management service in the mobile terminal, the method including receiving human network data from a social network service site; checking and converting a schema of each received human network data into a predetermined schema; and updating human network data in the mobile terminal according to the converted schema.

An anthracene derivative represented by Formula 1 is disclosed. An organic light-emitting device including an anode, a cathode, and an organic layer between the anode and the cathode, where the organic layer includes at least one anthracene derivative represented by Formula 1, is also disclosed. A method of manufacturing the organic light-emitting device is also disclosed. 

Anthracene derivatives and organic light emitting devices comprising the same

A method of forming a pattern of a semiconductor device includes: forming a first mask pattern comprising first mask lines extending in a first direction in a cell region and second mask lines extending in the first direction in a first core region, the first mask pattern covering a second core region; forming, on the first mask pattern, a second mask pattern comprising third mask lines extending in a second direction in the cell region and fourth mask lines extending in the second direction in the second core region, the second mask pattern covering the first core region; and forming a third mask pattern by using the second mask pattern, the third mask pattern comprising island-type masks in the cell region, fifth mask lines extending in the first direction in the first core region, and sixth mask lines extending in the second direction in the second core region.

Method of forming pattern of semiconductor device

A touch screen display apparatus including a sensor unit to sense and to process light signals and a pixel unit to drive pixels according to the light signal processing performed by the sensor unit. The touch screen display apparatus includes a substrate; a plurality of pixel units disposed on the substrate, wherein each of the pixel units includes a first electrode, a second electrode, and an emission layer interposed between the first electrode and the second electrode; and a plurality of sensor units disposed on the substrate, wherein each of the sensor units includes a sensor first electrode, a sensor second electrode, and an organic light receiving layer interposed between the sensor first electrode and the sensor second electrode.

Touch screen display apparatus and method of manufacturing the same

A method of manufacturing a semiconductor device includes: forming bit line structures spaced apart from each other by first groove disposed in first direction, extending in first direction, and spaced apart from each other in second direction perpendicular to first direction, on substrate in which word line is buried; forming multilayer spacer on both sidewalls of bit line structure; forming sacrificial layer to fill first groove; forming second grooves spaced apart from each other in first direction and second direction, by patterning sacrificial layer; etching outermost spacer of multilayer spacer located in second groove; forming first supplementary spacer in second groove; forming insulating layer to fill second groove; and forming third grooves spaced apart from each other in first direction and second direction, on both sides of first supplementary spacer, by removing sacrificial layer and insulating layer.

Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices

A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.

Semiconductor device having buried channel array

Semiconductor devices include a substrate having a target connection region; a conductive line having a first side wall spaced apart from the substrate by at least an insulating layer, and a conductive plug structure electrically connecting the conductive line to the target connection region, wherein the conductive plug includes a first conductive plug having a first side wall, a bottom surface contacting the target connection region of the substrate, and a second side wall facing the first side wall of the conductive line, and a second conductive plug between the conductive line and the first conductive plug. The second conductive plug contacts both the first side wall of the conductive line and the second side wall of the first conductive plug.

Semiconductor devices including conductive plug

Growing community of inventors

Gyeonggi-do, South Korea

Ji-Young Kim