Applied Materials, Inc.

Samsung Display Co., Ltd.

Ji Young Choung

Jungmin Lee

Yu-hsin Lin

Dieter Haas

Chung-Chia Chen

Si Kyoung Kim

Joon Gu Lee

Yeon Hwa Lee

Jin Baek Choi

Hyun Sung Bang

Takuji Kato

Wen-Hao Wu

Young Woo Song

Chung-chia Chen

Young-Woo Song

Yu-Hsin Lin

Won Jong Kim

Hyunsung Bang

Yu Hsin Lin

Jae Sik Kim

Jae Ik Kim

Duck Jung Lee

Seong Ho Yoo

Mu Gyeom Kim

Kyu Hwan Hwang

Young Gil Kwon

Se Hoon Jeong

Stefan Keller

Takashi Anjiki

Jung Sun Park

Man Ho Kim

Sheng-Wen Wang

The present disclosure provides devices and methods thereof. The devices include a substrate. An inorganic layer is disposed on the substrate. The inorganic layer defines sub-pixels of the device. The inorganic layer includes a plurality of overhang structures. The device includes a first sub-pixel, including a first anode having a first thickness, where a first organic light emitting diode (OLED) material is disposed over the first anode. The device includes a second sub-pixel, including a second anode having a second thickness, where a second OLED material is disposed over the second anode. The device includes a third sub-pixel, including a third anode having a third thickness, where a third OLED material is disposed over the third anode. The first thickness is greater than the second thickness, and the first OLED material and the second OLED material are the same.

OLED sub-pixel circuit architecture and related methods

Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

OLED panel with advanced sub-pixel overhangs

Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Descending etching resistance in advanced substrate patterning

Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.

Methods of fabricating OLED panel with inorganic pixel encapsulating barrier

Exemplary methods of OLED device processing are described. The methods may include forming an anode on a substrate. Forming the anode may include forming a first metal oxide material on the substrate, forming a metal layer over the first metal oxide material, forming a protective barrier over the metal layer, and forming a second metal oxide material over the amorphous protection material. The protective barrier may be an amorphous protection material overlying the metal layer.

OLED anode structures including amorphous transparent conducting oxides and OLED processing method comprising the same

Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.

High resolution advanced OLED sub-pixel circuit and patterning method

Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in an organic light-emitting diode (OLED) display are described herein. The overhang structures are permanent to the sub-pixel circuit. The overhang structures include a conductive oxide. A first configuration of the overhang structures includes a base portion and a top portion with the top portion disposed on the base portion. In a first sub-configuration, the base portion includes the conductive oxide of at least one of a TCO material or a TMO material. In a second sub-configuration, the base portion includes a metal alloy material and the conductive oxide of a metal oxide surface. A second configuration of the overhang structures includes the base portion and the top portion with a body portion disposed between the base portion and the top portion. The body portion includes the metal alloy body and the metal oxide surface.

Conductive oxide overhang structures for OLED devices

Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The sub-pixel circuit includes a plurality of contact overhangs. The plurality of contact overhangs are disposed between adjacent sub-pixels of a sub-pixel circuit to be formed. The contact overhangs are formed over a metal grid exposed through a PDL structure. A cathode is deposited via evaporation deposition to be in contact with the contact overhang. The metal grid is perpendicular to a plurality of metal layers disposed on the substrate.

Quasi global cathode contact method for advanced patterning

A display device includes a thin film transistor disposed on a base substrate, an insulation layer covering the thin film transistor, an organic light-emitting diode disposed on the insulation layer, a bus electrode and an organic fluoride pattern. The organic light-emitting diode includes a first electrode electrically connected to the thin film transistor, an organic light-emitting layer disposed on the first electrode, and a second electrode disposed on the organic light-emitting layer. The bus electrode is disposed on the second electrode. The organic fluoride pattern is disposed adjacent to the bus electrode.

Display device and method for manufacturing the same

Exemplary methods of backplane processing are described. The methods may include forming a first metal oxide material on a substrate. The methods may include forming a metal layer over the first metal oxide material. The metal layer may be or include silver. The methods may include forming an amorphous protection material over the metal layer. The amorphous protection material may include a second metal oxide material. The methods may include forming a second metal oxide material over the amorphous protection material. The second metal oxide material may include a crystalline material having one or more grain boundaries. The grain boundaries may include one or more voids.

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Yongin-si, South Korea

Ji Young Choung