Sungkyunkwan University

Samsung Electronics Co., Ltd.

Ji Young Byun

Ki Hyun Kim

Geun Young Yeom

Ki Seok Kim

You Jin Ji

Doo San Kim

Jin Woo Park

Won Oh Lee

Ji Soo Oh

Hyun Woo Tak

Chang Hoon Song

JiEun Kang

A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.

Photoelectronic device, photodiode, and phototransistor

A plasma source device includes a pair of divided electrodes including a first divided electrode and a second divided electrode spaced apart from each other and electrically coupled to each other; and a ferrite structure comprising a portion interposed the first divided electrode and the second divided electrode.

Plasma source and plasma generation apparatus using the same

The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Semiconductor device, photoelectronic device, and method for manufacturing transition-metal dichalcogenide thin film

Disclosed herein is a method of controlling a motor in an image reading apparatus. It may be possible to optimize the drive current of the motor for driving the movement of the scanning module by using information associated with, for example, the time it takes for the scanning module to return to a home or rest position after the scanning module is moved from the home position to a predetermined position. Such optimized drive current can result in improvements in the reading performance of an image by the image reading apparatus and reduction of power consumption.

Method of controlling motor in image reading apparatus

Growing community of inventors

Suwon-si, South Korea

Ji Young Byun