Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Ji-young Bae

Sun-ae Seo

Sung-chul Lee

Young-jin Cho

Ung-hwan Pi

Jin-seong Heo

Kwang-seok Kim

Seung-Jun Lee

Hyung-soon Shin

Kyoung-Jun Park

Jin-Kook Kim

Chang-won Lee

Kyeong-Ho Kim

Hyuk Nam

Jong-Hyuk Kim

Jong-Mok Lee

Bum-Joon Kim

Ung-hwan Pl

Young-soo Park

Jai-kwang Shin

Hyun-jong Chung

Dong-Chul Kim

Seon-Woong Hwang

Dae-young Jeon

Ran-ju Jung

Seong-Jae Hong

Mathias Kläui

A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (&#x3b2;).

Tracks including magnetic layer and magnetic memory devices comprising the same

Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same

An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement

An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.

Oscillators using magnetic domain wall and methods of operating the same

An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.

Oscillators and methods of operating the same

An information storage device includes a storage node, a write unit configured to write information to a first magnetic domain region of the storage node, and a read unit configured to read information from a second magnetic domain region of the storage node. The information storage device further includes a temporary storage unit configured to temporarily store information read by the read unit, and a write control unit electrically connected to the temporary storage unit and configured to control current supplied to the write unit. The information read from the second magnetic domain region is stored in the temporary storage unit and written to the first magnetic domain region.

Information storage devices using magnetic domain wall movement and methods of operating the same

Information storage devices are provided. An information storage device includes a track including at least one Co alloy layer and a soft magnetic layer. The track further includes a plurality of magnetic domains. A current applying element is connected to the track. The track includes a plurality of layers stacked alternately.

Information storage devices using magnetic domain wall movement

A compressor having a casing to which a gas suction pipe is connected; a driving motor provided in the casing; a cylinder; a valve supporting plate () covering the cylinder (), the valve supporting plate () having a suction hole () for sucking gas into the cylinder () and two discharge holes () for discharging gas compressed in the cylinder (); a piston () having two protrusions () at a pressure surface in correspondence to the two discharge holes () of the valve supporting plate (), the protrusions () having different sized cross-sections, the piston being linearly reciprocal in the cylinder () by receiving a driving force of the driving motor; a suction valve coupled to the valve supporting plate () to open and close the suction hole (); a discharge valve coupled to the valve supporting plate to open and close the two discharge holes ().

Compressor

Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track.

Semiconductor device using magnetic domain wall movement

A magnetic structure includes a first portion and a plurality of second portions. The first portion extends in a first direction. The plurality of second portions extend from ends of the first portion in a second direction. The first and second directions are perpendicular to one another. Two magnetic domains magnetized in directions opposite to each other and a magnetic domain wall between the magnetic domains are formed in the magnetic structure.

Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the same

A detachable connecting rod includes a first member ()a large end portion () having a trough hole (H), and a first connection rod portion () extending from the large end portion (), the first connection rod portion () having a pair of spaced apart arms defining a coupling groove () extending in the same direction as an axial direction of the through hole (H); a second member () including a small end portion having a through hole (H), and second connection rod portion () extending from the small end portion, the second connection rod () portion being inserted into the coupling groove () and a coupling unit for coupling the first connection rod portion () to the second connection rod portion inserted () into the coupling groove () of the first member (). The detachable connecting rod is useable in a compressor.

Detachable connecting rod and compressor having the same

An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

Information storage device and method of operating the same

Provided are information storage devices using movement of magnetic domain walls and methods of operating information storage devices. An information storage device includes a magnetic track and an operating unit. The magnetic track includes a plurality of magnetic domains separated by magnetic domain walls. The size of the operating unit is sufficient to cover at least two adjacent magnetic domains. And, the operating unit may be configured to write/read information to/from a single magnetic domain as well as a plurality of magnetic domains of the magnetic track.

An information storage device includes a magnetic structure having a buffer track and a plurality of storage tracks connected to the buffer track. A write/read unit is disposed on the magnetic structure, and a plurality of switching devices are respectively connected to the buffer track, the plurality of storage tracks, and the write/read unit. The switching devices that are respectively connected to the buffer track and the storage tracks. The information storage device further includes a circuit configured to supply current to at least one of the magnetic structure and the write/read unit.

Magnetic storage device having a buffer track and storage tracks, and method of operating the same

A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.

Growing community of inventors

Seongnam-si, South Korea

Ji-young Bae