Samsung Electronics Co., Ltd.

Ji-Youn Song

Dae Hoon Kim

Seung Sik Kim

Dong Seok Cho

Jae Hoon Jeon

KangMook Lim

Suk-Joo Lee

Joong-won Jeon

Min Woong Seo

Hyun Yong Jung

Seong-Yul Park

Myung Lae Chu

Mun-Su Shin

Seok San Kim

An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Image sensor

A unit pixel includes first and second photoelectric conversion units, a first transfer transistor disposed between the first photoelectric conversion unit and a first node, a first capacitor connected to the first node through a first switch transistor, and a second transfer transistor disposed between the second photoelectric conversion unit and the first node. A signal including a first voltage level is applied to the first transfer transistor and the second transfer transistor during a first time interval, a signal including a second voltage level is applied to the first transfer transistor, the second transfer transistor, and the first switch transistor during a second time interval, a signal including a third voltage level is applied to the first transfer transistor during a third time interval, and the signal including the first voltage level is applied to the second transfer transistor and the first switch transistor during a fourth time interval.

Unit pixel including one or more capacitors and an image sensor including the same

A method of designing patterns of semiconductor devices includes forming a plurality of tiles having patterns on a wafer, measuring the patterns of the plurality of tiles, analyzing the measurements of the patterns and determining a tile having such a size that the measurements linearly vary according to a design size and pattern density, and modifying the pattern density of the determined tile.

Method of designing patterns of semiconductor devices in consideration of pattern density

Growing community of inventors

Seoul, South Korea

Ji-Youn Song