Samsung Electronics Co., Ltd.

Ji Youl Lee

Jeong Il Park

Jong Won Chung

Bang Lin Lee

Bon Won Koo

Joo Young Kim

Eun Kyung Lee

Ji Young Jung

Hye Yeon Yang

Sang Yoon Lee

Joo-Young Kim

Yong Wan Jin

Sang-Yoon Lee

Alan J Heeger

Do Hwan Kim

Yong-wan Jin

Kyoung Seok Son

Myung-Sup Jung

Jeong-il Park

Byong Gwon Song

Byung Wook Yoo

Shinuk Cho

Byung-Wook Yoo

Jong-Won Chung

Jeong Ii Park

A thin film transistor includes a gate electrode and an organic semiconductor overlapping the gate electrode. A gate insulating layer is disposed between the gate electrode and the organic semiconductor. A source electrode and a drain electrode are disposed on and electrically connected to the organic semiconductor. A solvent selective photosensitive pattern is disposed on the organic semiconductor and between the source electrode and the drain electrode. An electronic device may include the thin film transistor.

Thin film transistor, method of manufacturing the same, and electronic device including the thin film transistor

A thin film transistor panel includes a gate electrode on a substrate, a gate insulating layer on the gate electrode, an organic semiconductor overlapping with the gate electrode, a source electrode and a drain electrode electrically connected to the organic semiconductor, a fluorine-containing organic insulation layer covering the organic semiconductor, and a photosensitive organic insulation layer covering the fluorine-containing organic insulation layer.

Thin film transistor panel and method of manufacturing the same, and electronic device including the thin film transistor panel

An organic semiconductor device includes an organic semiconductor, an electrode electrically connected to the organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end.

Organic semiconductor device and method of manufacturing the same

An organic semiconductor polymer includes a moiety represented by the following Chemical Formula 1 and a heteroaromatic moiety having at least one of sulfur (S) and selenium (Se).  In the Chemical Formula 1, R, R, R, R, R, R, R, and R, a1, a2, b1, and b2 are the same as described in the detailed description.

Organic semiconductor polymer, organic thin film transistor, and electronic device

A display device according to example embodiments includes a first thin film transistor on a substrate, a second thin film transistor on the first thin film transistor, and a display unit electrically connected to at least one of the first thin film transistor and the second thin film transistor.

Display device including thin film transistor

According to example embodiments, an organic passivation layer composition includes a cross-linking agent and an oligomer or a polymer including structural units represented by the following Chemical Formulae 1 and 2:  In Chemical Formulae 1 and 2, each substituent is defined in the detailed description.

Organic passivation layer composition, transistor and/or electronic device including organic passivation layer fabricated therefrom

A low-molecular-weight fused polycyclic heteroaromatic compound may have a compact planar structure in which seven or more rings are fused together. The compound may exhibit a relatively high charge mobility and enable the use of a deposition process or a room-temperature solution process when applied to devices, therefore realizing improved processibility. An organic thin film and electronic device may include the fused polycyclic heteroaromatic compound.

Fused polyheteroaromatic compound, organic thin film including the compound, and electronic device including the organic thin film

An organic electronic device includes an active region polarity definition layer, and a bulk heterojunction active layer formed on the active region polarity definition layer. The bulk heterojunction active layer includes an upper region and a lower region having respective majority carriers localized therein of different polarities.

Organic microelectronic device and fabrication method therefor

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Seoul, South Korea

Ji Youl Lee