Samsung Electronics Co., Ltd.

Ji-yoon Park

Jin-Woo Park

Seung-Bum Kim

Se-Hwan Park

Wan-Dong Kim

Deok-Woo Lee

You-se Kim

Hyun-Wook Wook Park

A method of erasing a memory device, the method of erasing the memory device including: performing, in a first erase period, a first erase operation on memory cells respectively connected to a plurality of word lines, wherein at least one of the memory cells, which is included in a memory block, is not erase-passed; determining, after the first erase period, an erase operation speed by applying a verify voltage to at least one of the plurality of word lines, and determining an effective erasing time for each word line based on the determined erase operation speed; and performing, in a second erase period, a second erase operation on the memory cells respectively connected to the plurality of word lines based on the determined effective erasing times.

Nonvolatile memory device and an erase method thereof

A nonvolatile memory device includes control logic and a memory cell array. The memory cell array includes a first plane and a second plane. The control logic is configured to perform a first sub-operation on the first plane, to perform a second sub-operation on the second plane, to delay the second sub-operation as much as a reference time so that a partial section of the first sub-operation does not overlap the second sub-operation, and to variably control the reference time.

Nonvolatile memory device and memory system including the same

Growing community of inventors

Suwon-si, South Korea

Ji-yoon Park