Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Je Ii Pharmaceutical Co., Ltd.

Ji Yoon Kim

Chang Hee Lee

Yool Guk Kim

Se Hun Kim

Min Woong Seo

Seung Sik Kim

Dong Hoon Kwak

Young Mo Koo

Jeong Min Kim

Kyung Hoon Kim

Dong Uk Kim

Won Jae Han

Young-hyun Kim

Dae Hoon Kim

Hong Seok Ko

Jae Kook Ha

Simon Buehlmann

Yoon Sun Park

Do Haeng Kim

Hyo Jin Ko

Jae Kyu Lee

Dong Mo Im

Seung Bum Hong

Jong Yup Kim

Young Il Kim

Yun Seok Kim

Sung Hoon Choa

Jae Hee Jo

Joseph Kim

Min Hwan Oh

Kwang Soo No

Joon Woo Nam

Ji Seon Park

Je Wan Hong

Jung Mee Lee

Ji Youn Song

A color changing substrate comprises a substrate comprising emission areas and non-emission areas, a color filter layer on the substrate and comprising a light blocking member partitioning the emission areas and the non-emission areas, and a plurality of color filters in areas surrounded by the light blocking member, a bank overlapping the light blocking member, a wavelength control layer comprising wavelength conversion layers and a light transmitting layer in areas surrounded by the bank, a reflective layer overlapping the bank, a first metal oxide layer overlapping the reflective layer, and a self-assembled layer overlapping the first metal oxide layer.

Color changing substrate and display device including the same

A display device includes an auxiliary electrode disposed on a substrate, a bank layer disposed on the auxiliary electrode, a conductive layer disposed on the auxiliary electrode, the conductive layer including a base portion and protrusions protruded from the base portion, an organic layer disposed on the conductive layer, and a cathode electrode disposed on the organic layer, the cathode electrode being in contact with the protrusions.

Display device and method for manufacturing the same

A display device includes a substrate, a pixel defining layer defining a first opening, a light emitting element including a first electrode exposed to outside the pixel defining layer by the first opening and a light emitting layer in the first opening and facing the first electrode, and a spacer spaced apart from the pixel defining layer along the substrate. The pixel defining layer and the spacer each includes a top surface which is furthest from the substrate and a height of the top surface from the substrate, and the height of the top surface of the spacer is greater than the height of the top surface of the pixel defining layer.

Display device and method of providing the same

A display device includes a substrate comprising a display area and a non-display area, a via layer disposed on the substrate, a pixel electrode disposed on the via layer in the display area, and a pixel-defining layer disposed on the pixel electrode and a part of the via layer exposed by the pixel electrode, wherein the pixel-defining layer comprises a first area disposed in the display area and comprising an opening exposing a part of the pixel electrode, and a second area disposed in the non-display area and comprising an end, and wherein the first area comprises a first side surface defining the opening, wherein the second area comprises a second side surface at the end, wherein a first taper angle which is a taper angle of the first side surface is different from a second taper angle which is a taper angle of the second side surface.

Display device and method of fabricating the same

A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.

Light emitting element, manufacturing method for light emitting element, and display device including the same

A display device according to an embodiment includes: a substrate including a display area, a dummy area, and a peripheral area; a passivation layer positioned in the display area, the dummy region, and the peripheral area of the substrate; a first adhesive auxiliary layer positioned on the passivation layer and positioned in the dummy region; a dummy pixel defining layer positioned on the first adhesive auxiliary layer and including a hydrophobic material; a second adhesive auxiliary layer positioned on the passivation layer, positioned in the peripheral area, and including a lateral side contacting the dummy pixel defining layer; a common voltage transmitter positioned in the peripheral area; and a common electrode connected to the common voltage transmitter, and positioned on the second adhesive auxiliary layer and the dummy pixel defining layer.

Display device

A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Semiconductor devices including support region and methods of forming the same

A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.

Semiconductor device including floating diffusion and extension pattern

The present disclosure relates to C-glycoside derivatives having a fused phenyl ring or pharmaceutical acceptable salts thereof, a method for preparing the same, a pharmaceutical composition comprising the same, a use thereof and a method for dual inhibition of SGLT1 and SGLT2 using the same. A novel compound of the present disclosure has a dual inhibitory activity against SGLT1 and SGLT2, thus being valuably used as a diabetes therapeutic agent.

C-glucoside derivative containing fused phenyl ring or pharmaceutically acceptable salt thereof, process for preparing same, and pharmaceutical composition comprising same

A washing machine includes a door and an auxiliary washing unit that may be readily fastened to each other by a locking unit for fastening the door and the auxiliary washing unit. The washing machine includes a main body in which an opening is formed, a door that opens and closes the opening, an auxiliary washing unit that is provided on an inner side of the door to form an auxiliary washing space, and a locking unit that locks the door and the auxiliary washing unit. Here, the locking unit may perform linear motion in one direction to lock or unlock the door and the auxiliary washing unit.

Washing machine

A method of recording bits on a ferroelectric medium using a scanning probe or a small conductive structure and a recording medium thereof, in which bit sizes can be decreased to increase data recording density as well as to reduce losses in reproduction signals. The method includes applying switching voltages to a lower electrode of the ferroelectric medium and the probe so as to write bits while approaching the probe to or bringing the probe into contact with a surface of the ferroelectric medium; and applying a base bias voltage, which is equal or smaller in magnitude and opposite in sign to the switching voltages between the switching voltages to make the probe equipotential with an upper portion of the record medium.

Bit recording process on ferroelectric medium using probe or small conductive structure and recording medium thereof

Growing community of inventors

Yongin-si, South Korea

Ji Yoon Kim